We have fabricated a large area and well aligned ultrasharp nanotip arrays by using photolithography and reactive ion etching techniques. The apex of the tip can be as sharp as about 3 nm in radius. The mechanism of nanotip formation is that the remained photoresist on top of the tip is gradually reduced with increasing the etching time, and hence sidewall of the tip is pared to form a pointier nanotip. At the end, the photoresist is fully etched away and a pyramid-like shape is formed at the tip-end due to the etch probability of incident ion on the sidewall. The field emission property of the ultrasharp nanotip is measured, and the turn-on field is about 20 MV-cm.
|主出版物標題||Proceedings - International NanoElectronics Conference, INEC|
|出版狀態||已發佈 - 2011|
|事件||4th IEEE International Nanoelectronics Conference, INEC 2011 - Tao-Yuan, 臺灣|
持續時間: 六月 21 2011 → 六月 24 2011
|其他||4th IEEE International Nanoelectronics Conference, INEC 2011|
|期間||6/21/11 → 6/24/11|
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