Understanding of multi-level resistive switching mechanism in GeOx through redox reaction in H2O2/sarcosine prostate cancer biomarker detection

Subhranu Samanta, Sheikh Ziaur Rahaman, Anisha Roy, Surajit Jana, Somsubhra Chakrabarti, Rajeswar Panja, Sourav Roy, Mrinmoy Dutta, Sreekanth Ginnaram, Amit Prakash, Siddheswar Maikap, Hsin Ming Cheng, Ling Na Tsai, Jian Tai Qiu, Samit K. Ray

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24 引文 斯高帕斯(Scopus)

摘要

Formation-free multi-level resistive switching characteristics by using 10 nm-thick polycrystalline GeOx film in a simple W/GeOx/W structure and understanding of switching mechanism through redox reaction in H2O2/sarcosine sensing (or changing Ge°/Ge4+ oxidation states under external bias) have been reported for the first time. Oxidation states of Ge0/Ge4+ are confirmed by both XPS and H2O2 sensing of GeOx membrane in electrolyte-insulator-semiconductor structure. Highly repeatable 1000 dc cycles and stable program/erase (P/E) endurance of >106 cycles at a small pulse width of 100 ns are achieved at a low operation current of 0.1 μA. The thickness of GeOx layer is found to be increased to 12.5 nm with the reduction of polycrystalline grain size of <7 nm after P/E of 106 cycles, which is observed by high-resolution TEM. The switching mechanism is explored through redox reaction in GeOx membrane by sensing 1 nM H2O2, which is owing to the change of oxidation states from Ge0 to Ge4+ because of the enhanced O2- ions migration in memory device under external bias. In addition, sarcosine as a prostate cancer biomarker with low concentration of 50 pM to 10 μM is also detected.

原文英語
文章編號11240
期刊Scientific Reports
7
發行號1
DOIs
出版狀態已發佈 - 12月 1 2017
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ASJC Scopus subject areas

  • 多學科

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