Thin-film transistors with Zn1-xMgxO active layers fabricated by sol-gel method

Shin Chuan Chiang, Chin Chih Yu, Chien Yie Tsay, Bor Chuan Chuang, Min Chi Wang, Chung Kwei Lin, Ming Ying Ma, Jiunn Yan Ou

研究成果: 書貢獻/報告類型會議貢獻

摘要

Zinc oxide thin-film transistors (ZnO-TFTs) have attracted numerous R&D interest due to their high transparency and low photosensitivity compared with typical a-Si:H TFTs. The electrical characteristics of ZnO films may be controlled by doping with ternary element. In this study, Zn 1-xMgxO (x = 0 to 0.36) thin films were prepared and TFTs with Zn1-xMgxO active channel layer were fabricated. The results show that, addition of Mg-species in ZnO films markedly improved optical properties. The Zn0.8Mg0.2O film exhibited the best transparency and the rms roughness value decreased to 1.63. The Zn 1-xMgxO TFTs were demonstrated to have n-type enhancement behavior.
原文英語
主出版物標題IDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings
頁面884-887
頁數4
出版狀態已發佈 - 2007
對外發佈Yes
事件International Display Manufacturing Conference and Exhibition, IDMC 2007 - Taipei, 臺灣
持續時間: 七月 3 2007七月 6 2007

其他

其他International Display Manufacturing Conference and Exhibition, IDMC 2007
國家臺灣
城市Taipei
期間7/3/077/6/07

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering
  • Electronic, Optical and Magnetic Materials

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  • 引用此

    Chiang, S. C., Yu, C. C., Tsay, C. Y., Chuang, B. C., Wang, M. C., Lin, C. K., Ma, M. Y., & Ou, J. Y. (2007). Thin-film transistors with Zn1-xMgxO active layers fabricated by sol-gel method. 於 IDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings (頁 884-887)