Tantalum nitride thin film resistors for high-frequency passive devices at interconnect levels

Chi Chang Wu, Wen Fa Wu, Shan Kai Lin, Jian Yang Lin, Chiu Fen Chiang

研究成果: 書貢獻/報告類型會議貢獻

摘要

The inclusion of precision on-chip passive devices is a new challenge for current and future interconnect architectures. This request for high quality passive devices is mainly driven by advanced high frequency and system-on-a-chip (SOC) applications. Precision thin film resistors are widely used in analog and mixed signal circuits and specific SOC applications. In this paper, tantalum nitride (TaNx) as the thin film resistor was investigated. The sheet resistance and XRD spectra of the TaNx films deposited at various nitrogen flow ratios were analyzed. The pattern of the TaNx resistor was defined by a novel two-step etching process. At the first step, TaN x was etched by Cl2 plasma to obtain a sharp profile and then, at the second step, a Cl2/O2 gas mixture was used to obtain a better etching selectivity. The temperature coefficient of resistance (TCR) of the TaNx resistor formed at various nitrogen flow ratios was measured. It is shown that the TCR increases with increasing nitrogen flow ratio, and TCR stability is slightly improved by the post-deposition plasma treatment. The flicker noise was measured at frequency from 1 to 100k Hz. It is exhibited that the current noise increased with increasing nitrogen flow ratio. Two-ported S parameters of the TaNx resistors were measured at frequency from 1 to 20 GHz. By extracting the S parameters, frequency dependence of the TaNx resistor is shown.

原文英語
主出版物標題Advanced Metallization Conference (AMC)
編輯D. Erb, P. Ramm, K. Masu, A. Osaki
頁面151-155
頁數5
出版狀態已發佈 - 2004
對外發佈Yes
事件Advanced Metallization Conference 2004, AMC 2004 - San Diego, CA, 美国
持續時間: 十月 19 2004十月 21 2004

其他

其他Advanced Metallization Conference 2004, AMC 2004
國家美国
城市San Diego, CA
期間10/19/0410/21/04

ASJC Scopus subject areas

  • Chemical Engineering(all)

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  • 引用此

    Wu, C. C., Wu, W. F., Lin, S. K., Lin, J. Y., & Chiang, C. F. (2004). Tantalum nitride thin film resistors for high-frequency passive devices at interconnect levels. 於 D. Erb, P. Ramm, K. Masu, & A. Osaki (編輯), Advanced Metallization Conference (AMC) (頁 151-155)