Solution-processable graphene oxide as an efficient hole transport layer in polymer solar cells

Shao Sian Li, Kun Hua Tu, Chih Cheng Lin, Chun Wei Chen, Manish Chhowalla

研究成果: 雜誌貢獻文章

588 引文 斯高帕斯(Scopus)

摘要

The utilization of graphene oxide (GO) thin films as the hole transport and electron blocking layer in organic photovoltaics (OPVs) is demonstrated. The incorporation of GO deposited from neutral solutions between the photoactive poly(3-hexylthiophene) (P3HT):phenyl-C61-butyric acid methyl ester (PCBM) layer and the transparent and conducting indium tin oxide (ITO) leads to a decrease in recombination of electrons and holes and leakage currents. This results in a dramatic increase in the OPV efficiencies to values that are comparable to devices fabricated with PEDOT:PSS as the hole transport layer. Our results indicate that GO could be a simple solution-processable alternative to PEDOT:PSS as the effective hole transport and electron blocking layer in OPV and light-emitting diode devices.
原文英語
頁(從 - 到)3169-3174
頁數6
期刊ACS Nano
4
發行號6
DOIs
出版狀態已發佈 - 六月 22 2010
對外發佈Yes

    指紋

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

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