Self-Aligned Deposition Process for Ultrathin Electroless Barriers and Copper Films on Low-k Dielectric Films

G. S. Chen, S. T. Chen, R. F. Louh, T. J. Yang, C. K. Lin

研究成果: 雜誌貢獻文章同行評審

5 引文 斯高帕斯(Scopus)

摘要

A self-aligned, integrated plating technique based on plasma physics and colloidal-related chemistry is proposed to fabricate patterns of ultrathin (≤20 nm) Co-based barriers and copper films in a selective manner on dielectric (HOSP™ and SiO2) films using electroless plating. High-resolution X-ray absorption spectroscopy, transmission electron microscopy, and atomic force microscopy reveal that, once properly pretreated by a gaseous plasma (O2 or H2/N2) and hydrogen peroxide (H2O2) in a basic aqueous solution, the dielectric films can adsorb highly populated metallic (Ni) precipitates of sizes approximately from 2 to 4 nm to catalyze the deposition of electroless Co-based barriers. Finally, the capability of this technique to fabricate "self-aligned" patterns of barrier and copper is demonstrated and the importance of the plasma pretreatment and hydrogen peroxide (in SC-1 solution) is discussed.
原文英語
期刊Electrochemical and Solid-State Letters
7
發行號2
DOIs
出版狀態已發佈 - 2004
對外發佈

ASJC Scopus subject areas

  • 電化學
  • 材料科學(全部)

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