摘要
A self-aligned, integrated plating technique based on plasma physics and colloidal-related chemistry is proposed to fabricate patterns of ultrathin (≤20 nm) Co-based barriers and copper films in a selective manner on dielectric (HOSP™ and SiO2) films using electroless plating. High-resolution X-ray absorption spectroscopy, transmission electron microscopy, and atomic force microscopy reveal that, once properly pretreated by a gaseous plasma (O2 or H2/N2) and hydrogen peroxide (H2O2) in a basic aqueous solution, the dielectric films can adsorb highly populated metallic (Ni) precipitates of sizes approximately from 2 to 4 nm to catalyze the deposition of electroless Co-based barriers. Finally, the capability of this technique to fabricate "self-aligned" patterns of barrier and copper is demonstrated and the importance of the plasma pretreatment and hydrogen peroxide (in SC-1 solution) is discussed.
原文 | 英語 |
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期刊 | Electrochemical and Solid-State Letters |
卷 | 7 |
發行號 | 2 |
DOIs | |
出版狀態 | 已發佈 - 2004 |
對外發佈 | 是 |
ASJC Scopus subject areas
- 電化學
- 材料科學(全部)