Selective growth of ZnO nanorod arrays with well-defined areas was developed to fabricate the NO2 gas sensor. The seed solution was ink-jet printed on the interdigitated electrodes. Then, vertically aligned ZnO nanorods were grown on the patterned seed layer by the hydrothermal approach. The influences of seed-solution properties and the ink-jet printing parameters on the printing performance and the morphology of the nanorods were studied. Round micropattern (diameter: 650 μm) of ZnO nanorod arrays is demonstrated. The dimensions and positions of the nanorod arrays can be controlled by changing the printed seed pattern. The effects of nanorod structure and nanorod size on the gas-sensing capability of ZnO nanorod gas sensors were demonstrated. Due to the high surface-to-volume ratios of the nanorod-array structure, the ZnO nanorod gas sensor can respond to 750 ppb NO2 at 100 °C. The sensors without baking treatment exhibit the typical response of a p-type semiconductor. However, only the response of n-type semiconductor oxides was observed after the annealing treatment at 150 °C for 2 h.
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