Role of the Hf/Si Interfacial Layer on the High Performance of MoS2-Based Conductive Bridge RAM for Artificial Synapse Application

Sreekanth Ginnaram, Jiantai Timothy Qiu, Siddheswar Maikap

研究成果: 雜誌貢獻文章同行評審

20 引文 斯高帕斯(Scopus)

摘要

In this letter, we demonstrate the key role of the Hf/Si interfacial layer (IL) in Al/Cu/IL/MoS2/TiN conductive bridge RAM. Owing to controlling Cu migration through Hf rather than Si, the Hf interface device offers consecutive >4000 DC cycles and long program/erase (P/E) endurance of gt; 2\times 10^{9}$ cycles under the low current operation of $100~\mu \text{A}$ at the fast switching speed of 100 ns. The Hf interface device shows gradual RESET, long-term potentiation/depression (LTP/LTD) pulses of 40/100 with small pulse width of 100 ns and a low power consumption of < 13 pJ is needed for artificial synapse applications.

原文英語
文章編號9035621
頁(從 - 到)709-712
頁數4
期刊IEEE Electron Device Letters
41
發行號5
DOIs
出版狀態已發佈 - 5月 2020
對外發佈

ASJC Scopus subject areas

  • 電子、光磁材料
  • 電氣與電子工程

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