Quantum dot light-emitting diode using solution-processable graphene oxide as the anode interfacial layer

Di Yan Wang, I. Sheng Wang, I. Sheng Huang, Yun Chieh Yeh, Shao Sian Li, Kun Hua Tu, Chia Chun Chen, Chun Wei Chen

研究成果: 雜誌貢獻文章同行評審

30 引文 斯高帕斯(Scopus)

摘要

In this article, the solution processable graphene oxide (GO) thin film was utilized as the anode interfacial layer in quantum dot light emitting diodes (QD-LEDs). The QD-LED devices (ITO/GO/QDs/TPBi/LiF/Al) were fabricated by employing a layer-by-layer assembled deposition technique with the electrostatic interaction between GO and QDs. The thicknesses of GO thin films and the layer number of CdSe/ZnS QD emissive layers were carefully controlled by spin-casting processes. The GO thin films, which act as the electron blocking and hole transporting layer in the QD-LED devices, have demonstrated the advantage of being compatible with fully solution-processed fabrications of large-area printable optoelectronic devices.
原文英語
頁(從 - 到)10181-10185
頁數5
期刊Journal of Physical Chemistry C
116
發行號18
DOIs
出版狀態已發佈 - 5月 10 2012
對外發佈

ASJC Scopus subject areas

  • 電子、光磁材料
  • 能源(全部)
  • 表面、塗料和薄膜
  • 物理與理論化學

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