Phase transformation of tungsten films deposited by diode and inductively coupled plasma magnetron sputtering

G. S. Chen, H. S. Tian, C. K. Lin, Gin Shiang Chen, H. Y. Lee

研究成果: 雜誌貢獻文章同行評審

14 引文 斯高帕斯(Scopus)

摘要

The phase transition behavior of tungsten thin films deposited using diode and inductively coupled plasma (ICP) magnetron sputtering was studied. The grazing incidence x-ray diffraction (GIXRD), scanning electron microscopy and transition electron microscopy were used to study the effects of various deposition parameters on the transition of the film's phase. It was found that films deposited by diode sputtering were mainly dominated by β-W, which yielded electrical resistivity ranging from ∼50 to ∼190 μω. On the other hand, the ICP sputtering was capable of depositing α-W films with resistivity of only ∼20 μω using adequate substrate bias.
原文英語
頁(從 - 到)281-286
頁數6
期刊Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films
22
發行號2
DOIs
出版狀態已發佈 - 三月 2004
對外發佈

ASJC Scopus subject areas

  • 表面、塗料和薄膜
  • 表面和介面
  • 物理與天文學(雜項)

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