TY - JOUR
T1 - Performance of sol-gel deposited Zn1 - xMgxO films used as active channel layer for thin-film transistors
AU - Tsay, Chien Yie
AU - Cheng, Hua Chi
AU - Wang, Min Chi
AU - Lee, Pee Yew
AU - Chen, Chia Fu
AU - Lin, Chung Kwei
PY - 2007/12/15
Y1 - 2007/12/15
N2 - ZnO thin-film transistors (TFTs) have attracted considerable R&D interest due to their high transparency and low photosensitivity compared with typical a-Si:H TFTs. The electrical characteristics of ZnO thin films may be controlled by doping with ternary element, for instance Al, Ga, In, Mg, Zr, etc. In this study, Zn1 - xMgxO (x = 0 to 0.36) thin films were deposited on glass substrates by spin coating. The as-deposited films were baked at 300 °C for 10 min and then annealed at 500 °C for 1 h in air. The results show that, addition of Mg-species in ZnO films markedly enhanced the uniformity of film thickness and improved optical properties. The Zn0.8Mg0.2O film exhibited the best transparency of 92%, an increase of ∼ 15% over a pure ZnO film, and the rms roughness value decreased to 1.63. The Zn1 - xMgxO TFTs were demonstrated to have n-type enhancement behavior. The optimum device with Zn0.8Mg0.2O channel layer had a field-effect mobility of 0.1 cm2/V s, a threshold voltage of 6.0 V, and an on/off ratio more than 107.
AB - ZnO thin-film transistors (TFTs) have attracted considerable R&D interest due to their high transparency and low photosensitivity compared with typical a-Si:H TFTs. The electrical characteristics of ZnO thin films may be controlled by doping with ternary element, for instance Al, Ga, In, Mg, Zr, etc. In this study, Zn1 - xMgxO (x = 0 to 0.36) thin films were deposited on glass substrates by spin coating. The as-deposited films were baked at 300 °C for 10 min and then annealed at 500 °C for 1 h in air. The results show that, addition of Mg-species in ZnO films markedly enhanced the uniformity of film thickness and improved optical properties. The Zn0.8Mg0.2O film exhibited the best transparency of 92%, an increase of ∼ 15% over a pure ZnO film, and the rms roughness value decreased to 1.63. The Zn1 - xMgxO TFTs were demonstrated to have n-type enhancement behavior. The optimum device with Zn0.8Mg0.2O channel layer had a field-effect mobility of 0.1 cm2/V s, a threshold voltage of 6.0 V, and an on/off ratio more than 107.
KW - Sol-gel method
KW - Thin-film transistors
KW - ZnMgO films
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U2 - 10.1016/j.surfcoat.2007.07.080
DO - 10.1016/j.surfcoat.2007.07.080
M3 - Article
AN - SCOPUS:36049003065
VL - 202
SP - 1323
EP - 1328
JO - Surface and Coatings Technology
JF - Surface and Coatings Technology
SN - 0257-8972
IS - 4-7
ER -