PECVD-Ti/TiNx barrier with multilayered amorphous structure and high thermal stability for copper metallization

Wen Fa Wu, Keng Liang Ou, Chang Pin Chou, Jwo Lun Hsu

研究成果: 雜誌貢獻文章

11 引文 (Scopus)

摘要

Ultrathin (10 nm) Ti films with an amorphous structure were deposited by low temperature (4 and H2 as reactants. Ammonia plasma was further employed to post-treat the PECVD-Ti barrier layer to improve barrier properties. An amorphous TiNx layer forms on the surface of the PECVD-Ti layer after ammonia plasma post-treatment. The resulting films have a multilayered amorphous Ti/TiNx structure. Furthermore, the effective resistivity of resulting Ti/TiNx film reduces to 122 μΩ cm. Improved barrier capability against Cu diffusion is found for the Ti/TiNx barrier layer because the Cu/TiNx/Ti/n+-p junction diodes retain low leakage current densities even after annealing at 500°C for 1 h. Ti/TiNx barrier layers present lengthened grain structures to effectively impede Cu diffusion, thus acting as much more effective barriers than are conventional Ti and TiN films.

原文英語
期刊Electrochemical and Solid-State Letters
6
發行號2
DOIs
出版狀態已發佈 - 二月 2003
對外發佈Yes

指紋

Plasma enhanced chemical vapor deposition
Metallizing
Copper
Thermodynamic stability
thermal stability
barrier layers
copper
Ammonia
ammonia
Plasmas
junction diodes
Crystal microstructure
p-n junctions
Leakage currents
Diodes
leakage
Current density
Annealing
current density
electrical resistivity

ASJC Scopus subject areas

  • Electrochemistry
  • Materials Science(all)

引用此文

PECVD-Ti/TiNx barrier with multilayered amorphous structure and high thermal stability for copper metallization. / Wu, Wen Fa; Ou, Keng Liang; Chou, Chang Pin; Hsu, Jwo Lun.

於: Electrochemical and Solid-State Letters, 卷 6, 編號 2, 02.2003.

研究成果: 雜誌貢獻文章

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