P16INK4a detection using an ultra-sensitive silicon nanowire field effect transistor

Jia Yang Hung, Yankuba B. Manga, Yu Ju Chen, Haw Ming Huang, Wen Luh Yang, Chi Chang Wu

研究成果: 書貢獻/報告類型章節

摘要

In general, if cancer can be earlier detected and treated, the chance of recovery is relatively much higher. Among all advanced molecular diagnostic techniques, silicon nanowire field effect transistor sensors have proven to have extremely high sensitivity and specificity. Through side-wall spacer etch technique which possesses simpler and cheaper process steps to manufacture polycrystalline silicon nanowire field effect transistor sensor. And p16INK4a protein which is related to cervical cancer, is taken as the target of detection. When human is infected with high-risk HPV, p16INK4a protein will be overexpressed. Therefore, we can know the extent of HPV infection by detecting p16INK4a protein, and then assess whether there is the risk of cervical cancer.

原文英語
主出版物標題Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018
發行者Institute of Electrical and Electronics Engineers Inc.
頁面1-2
頁數2
ISBN(電子)9781538614457
ISBN(列印)9781538614457
DOIs
出版狀態已發佈 - 六月 22 2018
事件7th International Symposium on Next-Generation Electronics, ISNE 2018 - Taipei, 臺灣
持續時間: 五月 7 2018五月 9 2018

出版系列

名字Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018

其他

其他7th International Symposium on Next-Generation Electronics, ISNE 2018
國家臺灣
城市Taipei
期間5/7/185/9/18

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Instrumentation

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  • 引用此

    Hung, J. Y., Manga, Y. B., Chen, Y. J., Huang, H. M., Yang, W. L., & Wu, C. C. (2018). P16INK4a detection using an ultra-sensitive silicon nanowire field effect transistor. 於 Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018 (頁 1-2). (Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISNE.2018.8394715