On the characteristics of AlGaN films grown on (111) and (001) Si substrates

Cheng Liang Wang, Jyh Rong Gong, Wei Tsai Liao, Wei L. Wang, Tai Yuan Lin, Chung Kwei Lin

研究成果: 雜誌貢獻文章同行評審

2 引文 斯高帕斯(Scopus)

摘要

High Al-content AlxGa1-xN films were deposited on (001) and (111) Si substrates at 1000°C using high temperature AlN buffer layers. Experimental results show that AlxGa1-xN films grown on (111) Si substrates exhibit better crystalline quality than that in the films deposited on (001) Si substrates. Cracks were found in the high Al-content AlxGa1-xN/(111) Si samples but they were not observed in the AlxGa1-xN films grown on (001) Si substrates having the same film thicknesses and Al compositions. Based upon the results of X-ray diffraction (XRD) and transmission electron microscopy (TEM), it appears that mono-crystalline AlxGa1-xN films were achieved on (111) Si substrates while columnar structure was observed in the AlxGa1-xN/(001) Si samples. According to the depth profiles of AlxGa1-xN/Si samples using secondary ion mass spectroscopic (SIMS) analyses, enhanced Al inter-diffusion in the Al xGa1-xN/(001) Si samples was identified. Room temperature (RT) photoluminescence (PL) measurements of the AlxGa1-xN (x≦0.10)/(111) Si samples exhibit strong near band edge luminescence. The PL emission linewidth was found to decrease with the decrement of Al-content.
原文英語
頁(從 - 到)63-66
頁數4
期刊Solid State Communications
137
發行號1-2
DOIs
出版狀態已發佈 - 1月 2006
對外發佈

ASJC Scopus subject areas

  • 材料科學(全部)
  • 凝聚態物理學

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