Novel sol-gel derived SONOS-type nanocrystal memory

Chi Chang Wu, Hsin Chiang You, Fu Hsiang Ko, Wen Luh Yang

研究成果: 書貢獻/報告類型會議貢獻

摘要

A nanocrystal (NC) memory by sol-gel spin-coating method was demonstrated. The high-density and isolated NC was formed by depositing a mixed solution of nickel tetrachloride, zirconium tetrachloride, silicon tetrachloride, and germanium tetrachloride with a post-rapid thermal annealing process. The electrical properties in terms of memory window, charge retention, program/erase speed, and endurance were demonstrated. The memory window of the NC memory can be up to 2.8 V; the retention times were extrapolated up to 106 sec for about 5% and 10% charge loss at 25 and 85 °C measurement, respectively. The voltage shift after 104 program/erase cycles is less than 1V. The good electrical performance was attributed to the effects of the high-density isolated NCs.

原文英語
主出版物標題INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
頁面1228-1229
頁數2
DOIs
出版狀態已發佈 - 2010
對外發佈
事件2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, 中国
持續時間: 一月 3 2010一月 8 2010

其他

其他2010 3rd International Nanoelectronics Conference, INEC 2010
國家/地區中国
城市Hongkong
期間1/3/101/8/10

ASJC Scopus subject areas

  • 電氣與電子工程

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