Novel ion bombardment technique for doping limited Cu source in SiO x-based nonvolatile switching layer

Sheng Hsien Liu, Wen Luh Yang, Yu Hsien Lin, Chi Chang Wu, Tien Sheng Chao

研究成果: 雜誌貢獻文章同行評審

11 引文 斯高帕斯(Scopus)

摘要

A novel ion bombardment (IB) technique is presented to dope a limited Cu source in an SiOx switching layer (SiOx Cu SL) for nonvolatile memory applications. Compared with other Cu-doping methods, this IB technique has many benefits, including a local-doping effect, room-temperature process, and compatibility with current IC manufacturing technology, besteading the 1T\hbox{-}1R integration. Through transmission electron microscopy and energy dispersive spectrometer analyses, an IB-induced SiOx:Cu SL is confirmed. In contrast with the conventional z{\rm Cu}/{\rm SiO} x-stacked sample, this IB-induced SiOx:Cu SL exhibits superior performance in terms of lower forming/RESET voltages, higher uniformity of SET/RESET voltages, and more stable high-temperature retention characteristics. Additionally, so far, this IB-induced TaN SiOx:Cu TaN device has shown the best switching endurance properties for the general SiOx-based Cu filament resistance random access memory.

原文英語
文章編號6603277
頁(從 - 到)1388-1390
頁數3
期刊IEEE Electron Device Letters
34
發行號11
DOIs
出版狀態已發佈 - 2013

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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