Near infrared photodetector based on polymer and indium nitride nanorod organic/inorganic hybrids

Wei Jung Lai; Shao Sian Li; Chih Cheng Lin; Chun Chiang Kuo; Chun Wei Chen; Kuei Hsien Chen; Li Chyong Chen

doi:10.1016/j.scriptamat.2010.05.035

Near infrared photodetector based on polymer and indium nitride nanorod organic/inorganic hybrids

Wei Jung Lai, Shao Sian Li, Chih Cheng Lin, Chun Chiang Kuo, Chun Wei Chen, Kuei Hsien Chen, Li Chyong Chen

研究成果: 雜誌貢獻 › 文章 › 同行評審

30 引文斯高帕斯（Scopus）

摘要

We propose a nanostructured near infrared photodetector based on indium nitride (InN) nanorod/poly(3-hexylthiophene) hybrids. The current-voltage characteristic of the hybrid device demonstrates the typical p-n heterojunction diode behavior, consisting of p-type polymer and n-type InN nanorods. The device shows a photoresponse range of 900-1260 nm under various reverse biases. An external quantum efficiency of 3.4% at 900 nm operated at -10 V reverse bias was obtained, which is comparable with devices based on lead sulfide and lead selenide hybrid systems.

原文	英語
頁（從 - 到）	653-656
頁數	4
期刊	Scripta Materialia
卷	63
發行號	6
DOIs	https://doi.org/10.1016/j.scriptamat.2010.05.035
出版狀態	已發佈 - 9月 1 2010
對外發佈	是

ASJC Scopus subject areas

材料科學(全部)
凝聚態物理學

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10.1016/j.scriptamat.2010.05.035

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abstract = "We propose a nanostructured near infrared photodetector based on indium nitride (InN) nanorod/poly(3-hexylthiophene) hybrids. The current-voltage characteristic of the hybrid device demonstrates the typical p-n heterojunction diode behavior, consisting of p-type polymer and n-type InN nanorods. The device shows a photoresponse range of 900-1260 nm under various reverse biases. An external quantum efficiency of 3.4% at 900 nm operated at -10 V reverse bias was obtained, which is comparable with devices based on lead sulfide and lead selenide hybrid systems.",

keywords = "Chemical vapor deposition (CVD), Composites, Nanostructure, Polymer matrix",

author = "Lai, {Wei Jung} and Li, {Shao Sian} and Lin, {Chih Cheng} and Kuo, {Chun Chiang} and Chen, {Chun Wei} and Chen, {Kuei Hsien} and Chen, {Li Chyong}",

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AU - Lai, Wei Jung

AU - Li, Shao Sian

AU - Lin, Chih Cheng

AU - Kuo, Chun Chiang

AU - Chen, Chun Wei

AU - Chen, Kuei Hsien

AU - Chen, Li Chyong

PY - 2010/9/1

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N2 - We propose a nanostructured near infrared photodetector based on indium nitride (InN) nanorod/poly(3-hexylthiophene) hybrids. The current-voltage characteristic of the hybrid device demonstrates the typical p-n heterojunction diode behavior, consisting of p-type polymer and n-type InN nanorods. The device shows a photoresponse range of 900-1260 nm under various reverse biases. An external quantum efficiency of 3.4% at 900 nm operated at -10 V reverse bias was obtained, which is comparable with devices based on lead sulfide and lead selenide hybrid systems.

AB - We propose a nanostructured near infrared photodetector based on indium nitride (InN) nanorod/poly(3-hexylthiophene) hybrids. The current-voltage characteristic of the hybrid device demonstrates the typical p-n heterojunction diode behavior, consisting of p-type polymer and n-type InN nanorods. The device shows a photoresponse range of 900-1260 nm under various reverse biases. An external quantum efficiency of 3.4% at 900 nm operated at -10 V reverse bias was obtained, which is comparable with devices based on lead sulfide and lead selenide hybrid systems.

KW - Chemical vapor deposition (CVD)

KW - Composites

KW - Nanostructure

KW - Polymer matrix

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Near infrared photodetector based on polymer and indium nitride nanorod organic/inorganic hybrids

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