Low-resistivity C54-TiSi2 as a sidewall-confinement nanoscale electrode for three-dimensional vertical resistive memory

José Ramón Durán Retamal, Chen Fang Kang, Po Kang Yang, Chuan Pei Lee, Der Hsien Lien, Chih Hsiang Ho, Jr Hau He

研究成果: 雜誌貢獻文章

6 引文 (Scopus)

摘要

A three-dimensional (3D) double-layer HfO2-based vertical-resistive random access memory (VRRAM) with low-resistivity C54-TiSi2 as horizontal electrodes is demonstrated using complementary metal-oxide semiconductor processing. The electrical measurements show bipolar resistive switching by using C54-TiSi2 as electrodes for resistive switching (RS) applications. The statistical analysis exhibits cycle-to-cycle and cell-to-cell stable non-volatile properties with robust endurance (100 cycles) and long term data retention (104s), suggesting that the ultrathin sidewall of C54-TiSi2 nanoscale electrodes serve to confine and stabilize the random nature of the conducting nanofilaments. The superior RS characteristics demonstrated here highlight the applicability of C54-TiSi2 sidewall-confinement nanoscale electrodes to VRRAM.
原文英語
文章編號182101
期刊Applied Physics Letters
105
發行號18
DOIs
出版狀態已發佈 - 十一月 3 2014
對外發佈Yes

指紋

electrical resistivity
electrodes
random access memory
cycles
endurance
cells
statistical analysis
electrical measurement
CMOS
conduction

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

引用此文

Low-resistivity C54-TiSi2 as a sidewall-confinement nanoscale electrode for three-dimensional vertical resistive memory. / Durán Retamal, José Ramón; Kang, Chen Fang; Yang, Po Kang; Lee, Chuan Pei; Lien, Der Hsien; Ho, Chih Hsiang; He, Jr Hau.

於: Applied Physics Letters, 卷 105, 編號 18, 182101, 03.11.2014.

研究成果: 雜誌貢獻文章

Durán Retamal, José Ramón ; Kang, Chen Fang ; Yang, Po Kang ; Lee, Chuan Pei ; Lien, Der Hsien ; Ho, Chih Hsiang ; He, Jr Hau. / Low-resistivity C54-TiSi2 as a sidewall-confinement nanoscale electrode for three-dimensional vertical resistive memory. 於: Applied Physics Letters. 2014 ; 卷 105, 編號 18.
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abstract = "A three-dimensional (3D) double-layer HfO2-based vertical-resistive random access memory (VRRAM) with low-resistivity C54-TiSi2 as horizontal electrodes is demonstrated using complementary metal-oxide semiconductor processing. The electrical measurements show bipolar resistive switching by using C54-TiSi2 as electrodes for resistive switching (RS) applications. The statistical analysis exhibits cycle-to-cycle and cell-to-cell stable non-volatile properties with robust endurance (100 cycles) and long term data retention (104s), suggesting that the ultrathin sidewall of C54-TiSi2 nanoscale electrodes serve to confine and stabilize the random nature of the conducting nanofilaments. The superior RS characteristics demonstrated here highlight the applicability of C54-TiSi2 sidewall-confinement nanoscale electrodes to VRRAM.",
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AU - Durán Retamal, José Ramón

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AU - Yang, Po Kang

AU - Lee, Chuan Pei

AU - Lien, Der Hsien

AU - Ho, Chih Hsiang

AU - He, Jr Hau

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