摘要
The integration of surface metal catalysts with semiconductor absorbers to produce photocatalytic devices is an attractive method for achieving high-efficiency solar-induced water splitting. However, once combined with a photoanode, detailed discussions of the light-induced processes on metal/semiconductor junction remain largely inadequate. Here, by employing in situ X-ray scattering/diffraction and absorption spectroscopy, the generation of a photoinduced adaptive structure is discovered at the interfacial metal–semiconductor (M–S) junction between a state-of-the-art porous silicon wire and nickel electrocatalyst, where oxygen evolution occurs under illumination. The adaptive layer in M–S junction through the light-induced activation can enhance the voltage by 247 mV (to reach a photocurrent density of 10 mA cm−2) with regard to the fresh photoanode, and increase the photocurrent density by six times at the potential of 1.23 V versus reversible reference electrode (RHE). This photoinduced adaptive layer offers a new perspective regarding the catalytic behavior of catalysts, especially for the photocatalytic water splitting of the system, and acting as a key aspect in the development of highly efficient photoelectrodes.
| 原文 | 英語 |
|---|---|
| 文章編號 | 1901308 |
| 期刊 | Advanced Energy Materials |
| DOIs | |
| 出版狀態 | 已發佈 - 一月 1 2019 |
指紋
ASJC Scopus subject areas
- Renewable Energy, Sustainability and the Environment
- Materials Science(all)
引用此文
Light-Induced Activation of Adaptive Junction for Efficient Solar-Driven Oxygen Evolution : In Situ Unraveling the Interfacial Metal–Silicon Junction. / Tung, Ching Wei; Kuo, Tsung Rong; Hsu, Chia Shuo; Chuang, Yen; Chen, Hsiao Chien; Chang, Chung Kai; Chien, Chia Ying; Lu, Ying Jui; Chan, Ting Shan; Lee, Jyh Fu; Li, Jiun Yun; Chen, Hao Ming.
於: Advanced Energy Materials, 01.01.2019.研究成果: 雜誌貢獻 › 文章
}
TY - JOUR
T1 - Light-Induced Activation of Adaptive Junction for Efficient Solar-Driven Oxygen Evolution
T2 - In Situ Unraveling the Interfacial Metal–Silicon Junction
AU - Tung, Ching Wei
AU - Kuo, Tsung Rong
AU - Hsu, Chia Shuo
AU - Chuang, Yen
AU - Chen, Hsiao Chien
AU - Chang, Chung Kai
AU - Chien, Chia Ying
AU - Lu, Ying Jui
AU - Chan, Ting Shan
AU - Lee, Jyh Fu
AU - Li, Jiun Yun
AU - Chen, Hao Ming
PY - 2019/1/1
Y1 - 2019/1/1
N2 - The integration of surface metal catalysts with semiconductor absorbers to produce photocatalytic devices is an attractive method for achieving high-efficiency solar-induced water splitting. However, once combined with a photoanode, detailed discussions of the light-induced processes on metal/semiconductor junction remain largely inadequate. Here, by employing in situ X-ray scattering/diffraction and absorption spectroscopy, the generation of a photoinduced adaptive structure is discovered at the interfacial metal–semiconductor (M–S) junction between a state-of-the-art porous silicon wire and nickel electrocatalyst, where oxygen evolution occurs under illumination. The adaptive layer in M–S junction through the light-induced activation can enhance the voltage by 247 mV (to reach a photocurrent density of 10 mA cm−2) with regard to the fresh photoanode, and increase the photocurrent density by six times at the potential of 1.23 V versus reversible reference electrode (RHE). This photoinduced adaptive layer offers a new perspective regarding the catalytic behavior of catalysts, especially for the photocatalytic water splitting of the system, and acting as a key aspect in the development of highly efficient photoelectrodes.
AB - The integration of surface metal catalysts with semiconductor absorbers to produce photocatalytic devices is an attractive method for achieving high-efficiency solar-induced water splitting. However, once combined with a photoanode, detailed discussions of the light-induced processes on metal/semiconductor junction remain largely inadequate. Here, by employing in situ X-ray scattering/diffraction and absorption spectroscopy, the generation of a photoinduced adaptive structure is discovered at the interfacial metal–semiconductor (M–S) junction between a state-of-the-art porous silicon wire and nickel electrocatalyst, where oxygen evolution occurs under illumination. The adaptive layer in M–S junction through the light-induced activation can enhance the voltage by 247 mV (to reach a photocurrent density of 10 mA cm−2) with regard to the fresh photoanode, and increase the photocurrent density by six times at the potential of 1.23 V versus reversible reference electrode (RHE). This photoinduced adaptive layer offers a new perspective regarding the catalytic behavior of catalysts, especially for the photocatalytic water splitting of the system, and acting as a key aspect in the development of highly efficient photoelectrodes.
KW - nickel
KW - oxygen evolution reaction
KW - photoanodes
KW - silicon
KW - water splitting
UR - http://www.scopus.com/inward/record.url?scp=85068910882&partnerID=8YFLogxK
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U2 - 10.1002/aenm.201901308
DO - 10.1002/aenm.201901308
M3 - Article
JO - Advanced Energy Materials
JF - Advanced Energy Materials
SN - 1614-6832
M1 - 1901308
ER -