Investigated Raman Spectroscopy of Graphene material properties

Jian Chiun Liou, Yi Tsung Chang, Kuan Wen Fang

研究成果: 書貢獻/報告類型會議貢獻

摘要

Raman spectrum of a graphene edge, showing the main raman features, the D band(∼1350 cm-1), G band(∼1580 cm-1) and 2D band (∼2700 cm-1) taken with a laser excitation energy of 2.41 eV. D band is not easy to be found in the good structure of the graphite, generally D band and G band integral intensity ratio ID/IG, to determine whether the carbon material defects and the crystallization of the pros and cons, but D band is usually also the incident light wavelength with the impact of the incident area. The insert voltage conditions with H2SO4 and KOH is demo in the study. The D band and G band integral intensity ratio ID/IG is equal 1.08, and FWHM(cm-1) is equal 97.6 value.
原文英語
主出版物標題EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits
發行者Institute of Electrical and Electronics Engineers Inc.
頁面1-2
頁數2
2017-January
ISBN(電子)9781538629079
DOIs
出版狀態已發佈 - 十二月 1 2017
對外發佈
事件13th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2017 - Hsinchu, 臺灣
持續時間: 十月 18 2017十月 20 2017

會議

會議13th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2017
國家/地區臺灣
城市Hsinchu
期間10/18/1710/20/17

ASJC Scopus subject areas

  • 電子、光磁材料
  • 硬體和架構
  • 電氣與電子工程

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