Improving retention properties by thermal imidization for polyimide-based nonvolatile resistive random access memories

Yu Ping Hsiao, Wen Luh Yang, Li Min Lin, Fun Tat Chin, Yu Hsien Lin, Ke Luen Yang, Chi Chang Wu

研究成果: 雜誌貢獻文章同行評審

5 引文 斯高帕斯(Scopus)

摘要

In this study, a polyimide (PI) thin film was synthesized as a resistive layer for creating resistive random access memory (ReRAM). The switch between high- and low-resistance states is caused by the formation and dissociation of dipole direction and Schottky barrier. The impact of imidization on memory properties was evaluated in detail by clarifying the transmission mechanism, and reliability properties including retention and endurance were improved using thermal imidization. In addition, the proposed PI-based ReRAM demonstrated superior performance levels compared with those of electrochemical-metallization-based and valence-change-based ReRAMs, including higher RON/ROFF ratio (> 107) and lower operation energy (< 0.16 MV/cm).

原文英語
頁(從 - 到)2188-2197
頁數10
期刊Microelectronics Reliability
55
發行號11
DOIs
出版狀態已發佈 - 2015

ASJC Scopus subject areas

  • 電子、光磁材料
  • 原子與分子物理與光學
  • 安全、風險、可靠性和品質
  • 凝聚態物理學
  • 表面、塗料和薄膜
  • 電氣與電子工程

指紋

深入研究「Improving retention properties by thermal imidization for polyimide-based nonvolatile resistive random access memories」主題。共同形成了獨特的指紋。

引用此