Improving electrical characteristics of Ta Ta2 O5 Ta capacitors using low-temperature inductively coupled N2 O plasma annealing

Kou Chiang Tsai, Wen Fa Wu, Chuen Guang Chao, Chi Chang Wu

研究成果: 雜誌貢獻文章

11 引文 斯高帕斯(Scopus)

摘要

The electrical characteristics of Ta Ta2 O5 Ta capacitors are improved by treatments with inductively coupled N2 O plasma. A low-temperature (250°C) and short (5 min) process was used to reduce the leakage current and improve the reliability. A low leakage current density (4.0× 10-10 A cm2 under 1 MVcm), high breakdown field (4.2 MVcm at 10-6 A cm2), and lifetime of over 10 years at 1.61 MVcm is obtained for the Ta Ta2 O5 Ta capacitor with the inductively coupled N2 O plasma treatment. The conduction mechanism of the leakage current in the Ta Ta2 O5 Ta capacitor is discussed using current-voltage analyses and shows that the leakage current of the Ta Ta2 O5 Ta capacitor is dominated by Schottky emission. N2 O plasma treatment can effectively reduce oxygen vacancies and the surface roughness of the Ta2 O5 film, inhibiting the conduction of the leakage current.

原文英語
期刊Journal of the Electrochemical Society
154
發行號6
DOIs
出版狀態已發佈 - 2007
對外發佈Yes

ASJC Scopus subject areas

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

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