Improvement in the characteristics of GaN-based light-emitting diodes by inserting A1GaN-GaN short-period superlattices in GaN underlayers

Cheng Liang Wang, Jyh Rong Gong, Ming Fa Yeh, Bor Jen Wu, Wei Tsai Liao, Tai Yuan Lin, Chung Kwei Lin

研究成果: 雜誌貢獻 › 文章

7 引文 (Scopus)

摘要

We report the influence of short-period superlattice (SPSL)-inserted structures in the underlying undoped GaN on the characteristics of GaN-based light-emitting diodes (LEDs). The measurements of current-voltage (I-V) curves indicate that GaN-based LEDs having pseudomorphic Al 0.3Ga 0.7 N(2 nm)-GaN(2 nm) SPSL-inserted structures exhibit improvements in device characteristics with the best LED being inserted with two sets of five-pair Al 0.3Ga 0.7 N(2 nm)-GaN(2 nm) SPSL structure. Based upon the results of etch pit counts, double-crystal X-ray diffraction measurements and transmission electron microscopic observations of the GaN-based LEDs, it was found that the Al 0.3Ga 0.7 N(2 nm)-GaN(2 nm) SPSL-inserted structures tended to serve as threading dislocation filters in the LEDs so that the improved I-V characteristics were achieved.
原文英語
頁（從 - 到）1497-1499
頁數3
期刊IEEE Photonics Technology Letters
卷18
發行號14
DOIs
出版狀態已發佈 - 七月 15 2006
對外發佈Yes

指紋

Superlattices
Light emitting diodes
superlattices
light emitting diodes
filters
X ray diffraction
Crystals
Electrons
Electric potential
electric potential
curves
diffraction
crystals
electrons
x rays

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Physics and Astronomy (miscellaneous)

引用此文

Improvement in the characteristics of GaN-based light-emitting diodes by inserting A1GaN-GaN short-period superlattices in GaN underlayers. / Wang, Cheng Liang; Gong, Jyh Rong; Yeh, Ming Fa; Wu, Bor Jen; Liao, Wei Tsai; Lin, Tai Yuan; Lin, Chung Kwei.

於: IEEE Photonics Technology Letters, 卷 18, 編號 14, 15.07.2006, p. 1497-1499.

研究成果: 雜誌貢獻 › 文章

Wang, CL, Gong, JR, Yeh, MF, Wu, BJ, Liao, WT, Lin, TY & Lin, CK 2006, 'Improvement in the characteristics of GaN-based light-emitting diodes by inserting A1GaN-GaN short-period superlattices in GaN underlayers', IEEE Photonics Technology Letters, 卷 18, 編號 14, 頁 1497-1499. https://doi.org/10.1109/LPT.2006.877587
Wang CL, Gong JR, Yeh MF, Wu BJ, Liao WT, Lin TY 等. Improvement in the characteristics of GaN-based light-emitting diodes by inserting A1GaN-GaN short-period superlattices in GaN underlayers. IEEE Photonics Technology Letters. 2006 7月 15;18(14):1497-1499. https://doi.org/10.1109/LPT.2006.877587
Wang, Cheng Liang ; Gong, Jyh Rong ; Yeh, Ming Fa ; Wu, Bor Jen ; Liao, Wei Tsai ; Lin, Tai Yuan ; Lin, Chung Kwei. / Improvement in the characteristics of GaN-based light-emitting diodes by inserting A1GaN-GaN short-period superlattices in GaN underlayers. 於: IEEE Photonics Technology Letters. 2006 ; 卷 18, 編號 14. 頁 1497-1499.
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AU - Liao, Wei Tsai

AU - Lin, Tai Yuan

AU - Lin, Chung Kwei

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AB - We report the influence of short-period superlattice (SPSL)-inserted structures in the underlying undoped GaN on the characteristics of GaN-based light-emitting diodes (LEDs). The measurements of current-voltage (I-V) curves indicate that GaN-based LEDs having pseudomorphic Al 0.3Ga 0.7 N(2 nm)-GaN(2 nm) SPSL-inserted structures exhibit improvements in device characteristics with the best LED being inserted with two sets of five-pair Al 0.3Ga 0.7 N(2 nm)-GaN(2 nm) SPSL structure. Based upon the results of etch pit counts, double-crystal X-ray diffraction measurements and transmission electron microscopic observations of the GaN-based LEDs, it was found that the Al 0.3Ga 0.7 N(2 nm)-GaN(2 nm) SPSL-inserted structures tended to serve as threading dislocation filters in the LEDs so that the improved I-V characteristics were achieved.

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