摘要
We report the influence of short-period superlattice (SPSL)-inserted structures in the underlying undoped GaN on the characteristics of GaN-based light-emitting diodes (LEDs). The measurements of current-voltage (I-V) curves indicate that GaN-based LEDs having pseudomorphic Al 0.3Ga 0.7 N(2 nm)-GaN(2 nm) SPSL-inserted structures exhibit improvements in device characteristics with the best LED being inserted with two sets of five-pair Al 0.3Ga 0.7 N(2 nm)-GaN(2 nm) SPSL structure. Based upon the results of etch pit counts, double-crystal X-ray diffraction measurements and transmission electron microscopic observations of the GaN-based LEDs, it was found that the Al 0.3Ga 0.7 N(2 nm)-GaN(2 nm) SPSL-inserted structures tended to serve as threading dislocation filters in the LEDs so that the improved I-V characteristics were achieved.
原文 | 英語 |
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頁(從 - 到) | 1497-1499 |
頁數 | 3 |
期刊 | IEEE Photonics Technology Letters |
卷 | 18 |
發行號 | 14 |
DOIs | |
出版狀態 | 已發佈 - 七月 15 2006 |
對外發佈 | Yes |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Atomic and Molecular Physics, and Optics
- Physics and Astronomy (miscellaneous)