Improved TaN barrier layer against Cu diffusion by formation of an amorphous layer using plasma treatment

Keng Liang Ou, Wen Fa Wu, Chang Pin Chou, Shi Yung Chiou, Chi Chang Wu

研究成果: 雜誌貢獻文章同行評審

23 引文 斯高帕斯(Scopus)

摘要

The effectiveness of tantalum nitride with N2 or O2 plasma treatment as a diffusion barrier between copper and silicon were investigated. As such, an amorphous layer was found to form on the surface of the TaN film after the plasma treatment. The oxygen and nitrogen bonding states were observed for O2 and N2 plasma-treated TaN films. Thus, thermal stabilities of plasma-treated barriers TaN(N)/TaN and TaN(O)/TaN were said to be better than those of untreated barriers TaN(10 nm) and TaN(50 nm).

原文英語
頁(從 - 到)2154-2161
頁數8
期刊Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
20
發行號5
DOIs
出版狀態已發佈 - 9月 2002
對外發佈

ASJC Scopus subject areas

  • 凝聚態物理學
  • 電氣與電子工程

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