Fully transparent resistive memory employing graphene electrodes for eliminating undesired surface effects

Po Kang Yang, Wen Yuan Chang, Po Yuan Teng, Shuo Fang Jeng, Su Jien Lin, Po Wen Chiu, Jr Hau He

研究成果: 雜誌貢獻文章同行評審

51 引文 斯高帕斯(Scopus)

摘要

A ZnO-based transparent resistance random access memory (TRRAM) employs atomic layered graphene exhibiting not only excellent transparency (less than 2% absorptance by graphene) but also reversible resistive switching characteristics. The statistical analysis including cycle-to-cycle and cell-to-cell tests for almost 100 cells shows that graphene plays a significant role to suppress the surface effect, giving rise to the notable increase in the switching yield and the insensitivity to the environmental atmosphere. The resistance variation of high-resistance state of ZnO is greatly suppressed by covering graphene as well. The device reliability investigation, such as the endurance more than 102 cycles and the retention time longer than 104 s, reveals the robust passivation of graphene for TRRAM applications. The obtained insights show guidelines not only for TRRAM device design and optimization against the undesired switching parameter variations but also for developing practically useful applications of graphene.
原文英語
文章編號6517461
頁(從 - 到)1732-1739
頁數8
期刊Proceedings of the IEEE
101
發行號7
DOIs
出版狀態已發佈 - 五月 27 2013
對外發佈Yes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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