Formation and characterization of the high precision nanoscale thin film resistors on radio frequency application

Huei Yu Huang, Chia Yu Wu, Chi Chang Wu

研究成果: 雜誌貢獻文章

摘要

In this paper, a high-precision tantalum nitride thin film resistor was fabricated using a novel plasma ion etching method. Sheet resistance and x-ray spectra confirmed that the composition and crystalline lattice of the tantalum nitride film varied upon different nitrogen flow ratios of sputtering. To obtain a good performance, we proposed a novel two-step etching process for the fabrication of tantalum nitride thin film resistor, that is, firstly etched using a Cl2 plasma for the purpose of sharp profile and fast etching rate, and followed by a Cl2/O2 gas mixture plasma to get a better etching selectivity. The temperature coefficient of resistance of the tantalum nitride thin film resistor showed that the temperature-related disturbance increased upon increasing the nitrogen composition of device. The temperature-related stability of the thin film resistor was further improved by post-deposited ammonia plasma treatment. The flicker noise, measured at frequency from 1 to 100k Hz, also showed that the current noise depended on the nitrogen composition of the thin film resistor. The characteristic of radio frequency dependent resistance, which was measured ranging from 1 to 20 GHz and extracted by two-ported S parameter and telegrapher's transmission line model, also showed that the stability of tantalum nitride thin film resistor decreased upon increasing the nitrogen composition.

原文英語
頁(從 - 到)6517-6526
頁數10
期刊International Journal of Electrochemical Science
10
發行號8
出版狀態已發佈 - 2015

指紋

Tantalum
Resistors
Nitrides
Thin films
Etching
Nitrogen
Plasmas
Chemical analysis
Sheet resistance
Scattering parameters
Ammonia
Gas mixtures
Crystal lattices
Temperature
Sputtering
Electric lines
Ions
Crystalline materials
Fabrication
X rays

ASJC Scopus subject areas

  • Electrochemistry

引用此文

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title = "Formation and characterization of the high precision nanoscale thin film resistors on radio frequency application",
abstract = "In this paper, a high-precision tantalum nitride thin film resistor was fabricated using a novel plasma ion etching method. Sheet resistance and x-ray spectra confirmed that the composition and crystalline lattice of the tantalum nitride film varied upon different nitrogen flow ratios of sputtering. To obtain a good performance, we proposed a novel two-step etching process for the fabrication of tantalum nitride thin film resistor, that is, firstly etched using a Cl2 plasma for the purpose of sharp profile and fast etching rate, and followed by a Cl2/O2 gas mixture plasma to get a better etching selectivity. The temperature coefficient of resistance of the tantalum nitride thin film resistor showed that the temperature-related disturbance increased upon increasing the nitrogen composition of device. The temperature-related stability of the thin film resistor was further improved by post-deposited ammonia plasma treatment. The flicker noise, measured at frequency from 1 to 100k Hz, also showed that the current noise depended on the nitrogen composition of the thin film resistor. The characteristic of radio frequency dependent resistance, which was measured ranging from 1 to 20 GHz and extracted by two-ported S parameter and telegrapher's transmission line model, also showed that the stability of tantalum nitride thin film resistor decreased upon increasing the nitrogen composition.",
keywords = "Flicker noise, Plasma ion etching, Tantalum nitride, Temperature coefficient of resistance, Thin film resistor",
author = "Huang, {Huei Yu} and Wu, {Chia Yu} and Wu, {Chi Chang}",
year = "2015",
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AU - Huang, Huei Yu

AU - Wu, Chia Yu

AU - Wu, Chi Chang

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AB - In this paper, a high-precision tantalum nitride thin film resistor was fabricated using a novel plasma ion etching method. Sheet resistance and x-ray spectra confirmed that the composition and crystalline lattice of the tantalum nitride film varied upon different nitrogen flow ratios of sputtering. To obtain a good performance, we proposed a novel two-step etching process for the fabrication of tantalum nitride thin film resistor, that is, firstly etched using a Cl2 plasma for the purpose of sharp profile and fast etching rate, and followed by a Cl2/O2 gas mixture plasma to get a better etching selectivity. The temperature coefficient of resistance of the tantalum nitride thin film resistor showed that the temperature-related disturbance increased upon increasing the nitrogen composition of device. The temperature-related stability of the thin film resistor was further improved by post-deposited ammonia plasma treatment. The flicker noise, measured at frequency from 1 to 100k Hz, also showed that the current noise depended on the nitrogen composition of the thin film resistor. The characteristic of radio frequency dependent resistance, which was measured ranging from 1 to 20 GHz and extracted by two-ported S parameter and telegrapher's transmission line model, also showed that the stability of tantalum nitride thin film resistor decreased upon increasing the nitrogen composition.

KW - Flicker noise

KW - Plasma ion etching

KW - Tantalum nitride

KW - Temperature coefficient of resistance

KW - Thin film resistor

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