Fabrication of 3D macroporous structures of II-VI and III-V semiconductors using electrochemical deposition

Yi Cheng Lee, Tsung Jung Kuo, Chih Jung Hsu, Ya Wen Su, Chia Chun Chen

研究成果: 雜誌貢獻文章

44 引文 斯高帕斯(Scopus)

摘要

Close-packed three-dimensional (3D) arrays of silica spheres assembled on an indium tin oxide (ITO) substrate surface have been prepared using sedimentation in the solution. Both galvanostatic and potentiostatic electrochemical depositions have been tested to infiltrate six different semiconductors, ZnSe, PbSe, CdSe, CdS, CdTe, and GaAs, onto the 3D silica arrays. The detailed studies of deposition parameters such as current density, deposition time, concentrations of electrolytes, solvents, and temperatures were performed to ensure the quality of resulting semiconductor films on the arrays. Followed by the removal of the silica arrays, 3D macroporous structures made from those semiconductors were obtained, and the structures exhibited 3D periodicity and uniformity. Clear diffraction peaks at ∼1350 nm of CdSe and CdS macroporous films were observed.
原文英語
頁(從 - 到)9942-9946
頁數5
期刊Langmuir
18
發行號25
DOIs
出版狀態已發佈 - 十二月 10 2002
對外發佈Yes

    指紋

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Colloid and Surface Chemistry

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