Evaluation of radio-frequency sputter-deposited textured TiN thin films as diffusion barriers between copper and silicon

G. S. Chen, J. J. Guo, C. K. Lin, Chen Sheng Hsu, L. C. Yang, J. S. Fang

研究成果: 雜誌貢獻文章同行評審

49 引文 斯高帕斯(Scopus)

摘要

The radio-frequency sputter-deposited textured TiN thin films used as diffusion barriers between copper and silicon were evaluated. The evaluations based on differences in sheet resistance, surface morphology and phase transformation induced by annealing Si/TiN (40 nm)/Cu(200 nm) samples suggested that (111) TiN was better diffusion barrier material for copper than (100) TiN. The crystallographic packing and microstructure of the textured diffusion barrier was found to be responsible for difference in barrier effectiveness.
原文英語
頁(從 - 到)479-485
頁數7
期刊Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films
20
發行號2
DOIs
出版狀態已發佈 - 三月 2002
對外發佈

ASJC Scopus subject areas

  • 表面、塗料和薄膜
  • 表面和介面
  • 物理與天文學(雜項)

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