Enhanced efficiency in InGaN-based photovoltaic devices combined with nanocrystalline Bi2O3/P3HT heterojunction structures

Chun Feng Lai, Chung-Chieh Chang, Min Hsueh Wen, Chung Kwei Lin, Mau Kuen Wu

研究成果: 雜誌貢獻文章同行評審

4 引文 斯高帕斯(Scopus)

摘要

This study experimentally investigates the ability of Bi2O 3/P3HT heterojunction thin films to improve the power-conversion efficiency of InGaN-based photovoltaic (PV) devices. InGaN-based PV devices combined with Bi2O3/P3HT heterojunctions were prepared using the pulsed laser deposition method. The Bi2O3/P3HT heterojunction creates carriers that combine with excitons through the light-absorbance process, which enhances the power-conversion efficiency of InGaN PV devices by approximately 36%. Thus, these Bi2O 3/P3HT heterojunctions can provide an efficiency improvement in InGaN PV devices and other related solar-cell applications.
原文英語
頁(從 - 到)1133-1136
頁數4
期刊Physica Status Solidi (A) Applications and Materials Science
210
發行號6
DOIs
出版狀態已發佈 - 六月 2013

ASJC Scopus subject areas

  • 電氣與電子工程
  • 電子、光磁材料
  • 材料化學
  • 凝聚態物理學
  • 表面和介面
  • 表面、塗料和薄膜

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