In this study, AZO thin films were deposited on glass by using a 98 mol% ZnO + 1 mol% Al2O3 (AZO, Zn: Al = 98: 2) ceramic target and a r.f. magnetron sputtering system. At first, the effects of different H2 flow rates (H2/(H2 + Ar) = 0%9.09%, abbreviated as H2-deposited AZO thin films, deposition temperature was 200°C) added during the deposition process on the physical and electrical properties of AZO thin films were investigated. The optical transmittance at 400 nm700 nm is more than 80% for all AZO thin films regardless of H2 flow rate and the transparency ratio decreased as the H 2 flow rate increased. The Burstein-Moss shift effect was used to prove that the defects of AZO thin films decreased with increasing H2 flow rate. Also, the 2% H2-deposited AZO thin films were also treated by the H2 plasma at room temperature for 60 min (plasma-treated AZO thin films). The value variations in the optical band gap (E g) values of the H2-deposited and plasma-treated AZO thin films were evaluated from the plots of h 2 = c (h - E g), and the E g values increased with increasing H2 flow rate. The E g values also increased as the H2-plasma process was used to treat on the H2-deposited Al2O3-doped ZnO (AZO) thin films.
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