Effects of deposition and annealing atmospheres on phase transition of tungsten oxide films grown by ultra-high-vacuum reactive sputtering

G. S. Ghen, W. L. Liao, S. T. Chen, W. C. Su, C. K. Lin

研究成果: 雜誌貢獻文章

11 引文 (Scopus)

摘要

A series of oxygen-contained tungsten films were grown on Si(100) substrates without intentional heating by ultra-high-vacuum reactive magnetron sputtering at a constant argon pressure (PAr) of 1.33 × 10 - 1 Pa mixed with a wide range of O2 partial pressures (PO) from 1.33 × 10- 4 to 4 × 10- 1 Pa, equivalent to PO-to-PAr ratios (PO / Ar) from 1 × 10- 3 to 3. The effect of varying PO / Ar on phase evolution was evaluated by annealing the films in a controlled atmosphere (argon or oxygen) at 500 or 700 °C for 1 h. Grazing incident X-ray diffraction and transmission electron microscopy, together with the data of electrical resistivity and deposition rate, reveal that gradually increasing PO / Ar induces a sequence of phase transitions from nanocrystalline β-W(O) (PO / Ar ≤ 0.1), amorphous WO2 (P O / Ar = 0.6) to amorphous WO3 (PO / Ar 2). When annealed in argon atmosphere, the amorphous WO2 and WO 3 exhibit a very different magnitude of crystallization temperature (Tc) and can be transformed, respectively, into monoclinic WO 2 (Tc = 500 °C) and tetragonal WO3 (T c = 700 °C). However, the oxidizing atmosphere plays a role to accelerate significantly the crystallization of the amorphous WO2 into a completely different phase (monoclinic WO3) at a significantly reduced Tc of 500 °C.
原文英語
頁(從 - 到)301-306
頁數6
期刊Thin Solid Films
493
發行號1-2
DOIs
出版狀態已發佈 - 十二月 22 2005
對外發佈Yes

指紋

tungsten oxides
Reactive sputtering
Ultrahigh vacuum
ultrahigh vacuum
Oxide films
Tungsten
oxide films
Argon
sputtering
Phase transitions
argon
Annealing
atmospheres
annealing
Crystallization
crystallization
controlled atmospheres
grazing
oxygen
Oxygen

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

引用此文

Effects of deposition and annealing atmospheres on phase transition of tungsten oxide films grown by ultra-high-vacuum reactive sputtering. / Ghen, G. S.; Liao, W. L.; Chen, S. T.; Su, W. C.; Lin, C. K.

於: Thin Solid Films, 卷 493, 編號 1-2, 22.12.2005, p. 301-306.

研究成果: 雜誌貢獻文章

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abstract = "A series of oxygen-contained tungsten films were grown on Si(100) substrates without intentional heating by ultra-high-vacuum reactive magnetron sputtering at a constant argon pressure (PAr) of 1.33 × 10 - 1 Pa mixed with a wide range of O2 partial pressures (PO) from 1.33 × 10- 4 to 4 × 10- 1 Pa, equivalent to PO-to-PAr ratios (PO / Ar) from 1 × 10- 3 to 3. The effect of varying PO / Ar on phase evolution was evaluated by annealing the films in a controlled atmosphere (argon or oxygen) at 500 or 700 °C for 1 h. Grazing incident X-ray diffraction and transmission electron microscopy, together with the data of electrical resistivity and deposition rate, reveal that gradually increasing PO / Ar induces a sequence of phase transitions from nanocrystalline β-W(O) (PO / Ar ≤ 0.1), amorphous WO2 (P O / Ar = 0.6) to amorphous WO3 (PO / Ar 2). When annealed in argon atmosphere, the amorphous WO2 and WO 3 exhibit a very different magnitude of crystallization temperature (Tc) and can be transformed, respectively, into monoclinic WO 2 (Tc = 500 °C) and tetragonal WO3 (T c = 700 °C). However, the oxidizing atmosphere plays a role to accelerate significantly the crystallization of the amorphous WO2 into a completely different phase (monoclinic WO3) at a significantly reduced Tc of 500 °C.",
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AB - A series of oxygen-contained tungsten films were grown on Si(100) substrates without intentional heating by ultra-high-vacuum reactive magnetron sputtering at a constant argon pressure (PAr) of 1.33 × 10 - 1 Pa mixed with a wide range of O2 partial pressures (PO) from 1.33 × 10- 4 to 4 × 10- 1 Pa, equivalent to PO-to-PAr ratios (PO / Ar) from 1 × 10- 3 to 3. The effect of varying PO / Ar on phase evolution was evaluated by annealing the films in a controlled atmosphere (argon or oxygen) at 500 or 700 °C for 1 h. Grazing incident X-ray diffraction and transmission electron microscopy, together with the data of electrical resistivity and deposition rate, reveal that gradually increasing PO / Ar induces a sequence of phase transitions from nanocrystalline β-W(O) (PO / Ar ≤ 0.1), amorphous WO2 (P O / Ar = 0.6) to amorphous WO3 (PO / Ar 2). When annealed in argon atmosphere, the amorphous WO2 and WO 3 exhibit a very different magnitude of crystallization temperature (Tc) and can be transformed, respectively, into monoclinic WO 2 (Tc = 500 °C) and tetragonal WO3 (T c = 700 °C). However, the oxidizing atmosphere plays a role to accelerate significantly the crystallization of the amorphous WO2 into a completely different phase (monoclinic WO3) at a significantly reduced Tc of 500 °C.

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