Effects of capping layers on the electrical characteristics of nickel silicided junctions

Chi Chang Wu, Wen Fa Wu, P. Y. Su, L. J. Chen, Fu Hsiang Ko

研究成果: 雜誌貢獻文章

13 引文 (Scopus)

摘要

In this paper, effects of capping layers on formation and electrical properties of Ni-silicided junctions have been investigated. Nickel silicide films using the Ti or TiN-capped layer process are used to compare to those by the uncapped process. The uncapped (Ni single layer) and TiN-capped samples are shown to exhibit better thermal stability than the Ti-capped samples. For the silicided junctions, samples using Ti capping layer processes exhibit larger leakage current densities. A high-resistivity NixTiySiz compound layer is formed on the surface during silicidation for the Ti-capped sample, while the uncapped and TiN-capped samples are not. In addition, it is found that the thickness of NiSi layer, as well as the NixTiySiz layer, increases with increasing the Ti capping layer thickness. The formation of NixTiySiz layer not only increases the contact resistance, but also deepens the silicide thickness.

原文英語
頁(從 - 到)1801-1805
頁數5
期刊Microelectronic Engineering
84
發行號5-8
DOIs
出版狀態已發佈 - 五月 2007
對外發佈Yes

指紋

Contact resistance
Nickel
Leakage currents
Electric properties
Thermodynamic stability
Current density
nickel
nickel silicide
contact resistance
leakage
thermal stability
electrical properties
current density
electrical resistivity

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics

引用此文

Effects of capping layers on the electrical characteristics of nickel silicided junctions. / Wu, Chi Chang; Wu, Wen Fa; Su, P. Y.; Chen, L. J.; Ko, Fu Hsiang.

於: Microelectronic Engineering, 卷 84, 編號 5-8, 05.2007, p. 1801-1805.

研究成果: 雜誌貢獻文章

Wu, Chi Chang ; Wu, Wen Fa ; Su, P. Y. ; Chen, L. J. ; Ko, Fu Hsiang. / Effects of capping layers on the electrical characteristics of nickel silicided junctions. 於: Microelectronic Engineering. 2007 ; 卷 84, 編號 5-8. 頁 1801-1805.
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