Effect of the Bulk Charge on the Thermal Noise in Mental-Oxide-Silicon Field-Effect Transistors

C. T. Sah, F. H. Hielscher, S. Y. Wu

研究成果: 雜誌貢獻 › 文章 › 同行評審

原文	英語
頁（從 - 到）	509-510
頁數	2
期刊	IEEE Transactions on Electron Devices
卷	12
發行號	9
DOIs	https://doi.org/10.1109/T-ED.1965.15592
出版狀態	已發佈 - 1月 1 1965
對外發佈	是

ASJC Scopus subject areas

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