Effect of Sn-doped on microstructural and optical properties of ZnO thin films deposited by sol-gel method

Chien Yie Tsay, Hua Chi Cheng, Yen Ting Tung, Wei Hsing Tuan, Chung Kwei Lin

研究成果: 雜誌貢獻文章

172 引文 (Scopus)

摘要

In this study, transparent thin films of Sn-doped ZnO (ZnO:Sn) were deposited onto alkali-free glass substrates by a sol-gel method; the effect of Sn doping on crystallinity, microstructural and optical properties was investigated. The atomic percentages of dopant in ZnO-based sols were Sn/Zn = 0, 1, 2, 3, and 5 at.%. The as-deposited films were pre-heated at 300 °C for 10 min and then annealed in air at 500 °C for 1 h. The results show that Sn-doped ZnO thin films demonstrate obviously improved surface roughness, enhanced transmittance in the 400-600 nm wavelength range and reduced average crystallite size. Among all of the annealed ZnO-based films in this study, films doped with 2 at.% Sn concentration exhibited the best properties, namely an average transmittance of 90%, an RMS roughness value of 1.92 nm and a resistivity of 9.3 × 102 Ω-cm.
原文英語
頁(從 - 到)1032-1036
頁數5
期刊Thin Solid Films
517
發行號3
DOIs
出版狀態已發佈 - 十二月 1 2008
對外發佈Yes

指紋

Sol-gel process
Optical properties
gels
optical properties
Thin films
transmittance
thin films
Surface roughness
Doping (additives)
Alkalies
Polymethyl Methacrylate
Crystallite size
Sols
alkalies
crystallinity
surface roughness
roughness
Glass
Wavelength
electrical resistivity

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

引用此文

Effect of Sn-doped on microstructural and optical properties of ZnO thin films deposited by sol-gel method. / Tsay, Chien Yie; Cheng, Hua Chi; Tung, Yen Ting; Tuan, Wei Hsing; Lin, Chung Kwei.

於: Thin Solid Films, 卷 517, 編號 3, 01.12.2008, p. 1032-1036.

研究成果: 雜誌貢獻文章

Tsay, Chien Yie ; Cheng, Hua Chi ; Tung, Yen Ting ; Tuan, Wei Hsing ; Lin, Chung Kwei. / Effect of Sn-doped on microstructural and optical properties of ZnO thin films deposited by sol-gel method. 於: Thin Solid Films. 2008 ; 卷 517, 編號 3. 頁 1032-1036.
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title = "Effect of Sn-doped on microstructural and optical properties of ZnO thin films deposited by sol-gel method",
abstract = "In this study, transparent thin films of Sn-doped ZnO (ZnO:Sn) were deposited onto alkali-free glass substrates by a sol-gel method; the effect of Sn doping on crystallinity, microstructural and optical properties was investigated. The atomic percentages of dopant in ZnO-based sols were Sn/Zn = 0, 1, 2, 3, and 5 at.{\%}. The as-deposited films were pre-heated at 300 °C for 10 min and then annealed in air at 500 °C for 1 h. The results show that Sn-doped ZnO thin films demonstrate obviously improved surface roughness, enhanced transmittance in the 400-600 nm wavelength range and reduced average crystallite size. Among all of the annealed ZnO-based films in this study, films doped with 2 at.{\%} Sn concentration exhibited the best properties, namely an average transmittance of 90{\%}, an RMS roughness value of 1.92 nm and a resistivity of 9.3 × 102 Ω-cm.",
keywords = "Sn doping, Sol-gel method, Transparent oxide semiconductors, ZnO thin films",
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T1 - Effect of Sn-doped on microstructural and optical properties of ZnO thin films deposited by sol-gel method

AU - Tsay, Chien Yie

AU - Cheng, Hua Chi

AU - Tung, Yen Ting

AU - Tuan, Wei Hsing

AU - Lin, Chung Kwei

PY - 2008/12/1

Y1 - 2008/12/1

N2 - In this study, transparent thin films of Sn-doped ZnO (ZnO:Sn) were deposited onto alkali-free glass substrates by a sol-gel method; the effect of Sn doping on crystallinity, microstructural and optical properties was investigated. The atomic percentages of dopant in ZnO-based sols were Sn/Zn = 0, 1, 2, 3, and 5 at.%. The as-deposited films were pre-heated at 300 °C for 10 min and then annealed in air at 500 °C for 1 h. The results show that Sn-doped ZnO thin films demonstrate obviously improved surface roughness, enhanced transmittance in the 400-600 nm wavelength range and reduced average crystallite size. Among all of the annealed ZnO-based films in this study, films doped with 2 at.% Sn concentration exhibited the best properties, namely an average transmittance of 90%, an RMS roughness value of 1.92 nm and a resistivity of 9.3 × 102 Ω-cm.

AB - In this study, transparent thin films of Sn-doped ZnO (ZnO:Sn) were deposited onto alkali-free glass substrates by a sol-gel method; the effect of Sn doping on crystallinity, microstructural and optical properties was investigated. The atomic percentages of dopant in ZnO-based sols were Sn/Zn = 0, 1, 2, 3, and 5 at.%. The as-deposited films were pre-heated at 300 °C for 10 min and then annealed in air at 500 °C for 1 h. The results show that Sn-doped ZnO thin films demonstrate obviously improved surface roughness, enhanced transmittance in the 400-600 nm wavelength range and reduced average crystallite size. Among all of the annealed ZnO-based films in this study, films doped with 2 at.% Sn concentration exhibited the best properties, namely an average transmittance of 90%, an RMS roughness value of 1.92 nm and a resistivity of 9.3 × 102 Ω-cm.

KW - Sn doping

KW - Sol-gel method

KW - Transparent oxide semiconductors

KW - ZnO thin films

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