8 引文 (Scopus)

摘要

Background: Developing ultrasensitive and selective biological sensors has increased in interest for applications in disease detection, drug discovery, and biomedical diagnostics. This paper reports a CMOS-compatible technique for fabricating a silicon nanowire field-effect transistor. The nanowire sensor was applied to detect a fragment of the cancer-related interleukin-1β (IL-1β) gene, which is characterized as an indicator of breast, colon, lung, oral, head, and neck cancers. Methods: We used the advanced integrated circuit (IC) technique to fabricate a back-gated nanowire field-effect transistor sensor. The dimensions of the nanowire were 60 nm in width and 20 μm in length. To enhance the sensitivity of the nanowire sensor, a plasma modification treatment with various parameters was employed on the surface of the device. Results: The sensitivity of the silicon nanowire field-effect transistor could be improved after a 1-minute N2O plasma treatment, because the morphology of the detection region is rougher after the N2O plasma treatment. Hence, a more functional linker could be bound to the surface, thereby increasing the probability of DNA immobilization and hybridization. We used a specific sequence of the IL-1β gene to verify the sensitivity enhancement of the nanowire sensor by using plasma treatment. Conclusion: The sensitivity and detection limit of the plasma-treated sensor can be extrapolated to 0.12/decade and 2.5fM, respectively. The detection results demonstrate that real-time monitoring of the expression of IL-1β using nanowire sensors could be useful for evaluating cancer treatment.
原文英語
頁(從 - 到)12-16
頁數5
期刊Journal of Experimental and Clinical Medicine(Taiwan)
5
發行號1
DOIs
出版狀態已發佈 - 2013

指紋

Nanowires
Biosensing Techniques
Silicon
Interleukin-1
Genes
Mouth Neoplasms
Drug Discovery
Head and Neck Neoplasms
Immobilization
Colonic Neoplasms
Limit of Detection
Lung Neoplasms
Neoplasms
Breast Neoplasms
Equipment and Supplies

ASJC Scopus subject areas

  • Medicine(all)

引用此文

Detecting Interleukin-1β Genes Using a N2O Plasma Modified Silicon Nanowire Biosensor. / Wu, Jia Yo; Tseng, Ching Li; Wang, Yang Kao; Yu, Yvonne; Ou, Keng Liang; Wu, Chi Chang.

於: Journal of Experimental and Clinical Medicine(Taiwan), 卷 5, 編號 1, 2013, p. 12-16.

研究成果: 雜誌貢獻文章

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abstract = "Background: Developing ultrasensitive and selective biological sensors has increased in interest for applications in disease detection, drug discovery, and biomedical diagnostics. This paper reports a CMOS-compatible technique for fabricating a silicon nanowire field-effect transistor. The nanowire sensor was applied to detect a fragment of the cancer-related interleukin-1β (IL-1β) gene, which is characterized as an indicator of breast, colon, lung, oral, head, and neck cancers. Methods: We used the advanced integrated circuit (IC) technique to fabricate a back-gated nanowire field-effect transistor sensor. The dimensions of the nanowire were 60 nm in width and 20 μm in length. To enhance the sensitivity of the nanowire sensor, a plasma modification treatment with various parameters was employed on the surface of the device. Results: The sensitivity of the silicon nanowire field-effect transistor could be improved after a 1-minute N2O plasma treatment, because the morphology of the detection region is rougher after the N2O plasma treatment. Hence, a more functional linker could be bound to the surface, thereby increasing the probability of DNA immobilization and hybridization. We used a specific sequence of the IL-1β gene to verify the sensitivity enhancement of the nanowire sensor by using plasma treatment. Conclusion: The sensitivity and detection limit of the plasma-treated sensor can be extrapolated to 0.12/decade and 2.5fM, respectively. The detection results demonstrate that real-time monitoring of the expression of IL-1β using nanowire sensors could be useful for evaluating cancer treatment.",
keywords = "Field-effect transistor, Label-free detection, Nitrous oxide plasma, Silicon nanowire",
author = "Wu, {Jia Yo} and Tseng, {Ching Li} and Wang, {Yang Kao} and Yvonne Yu and Ou, {Keng Liang} and Wu, {Chi Chang}",
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T1 - Detecting Interleukin-1β Genes Using a N2O Plasma Modified Silicon Nanowire Biosensor

AU - Wu, Jia Yo

AU - Tseng, Ching Li

AU - Wang, Yang Kao

AU - Yu, Yvonne

AU - Ou, Keng Liang

AU - Wu, Chi Chang

PY - 2013

Y1 - 2013

N2 - Background: Developing ultrasensitive and selective biological sensors has increased in interest for applications in disease detection, drug discovery, and biomedical diagnostics. This paper reports a CMOS-compatible technique for fabricating a silicon nanowire field-effect transistor. The nanowire sensor was applied to detect a fragment of the cancer-related interleukin-1β (IL-1β) gene, which is characterized as an indicator of breast, colon, lung, oral, head, and neck cancers. Methods: We used the advanced integrated circuit (IC) technique to fabricate a back-gated nanowire field-effect transistor sensor. The dimensions of the nanowire were 60 nm in width and 20 μm in length. To enhance the sensitivity of the nanowire sensor, a plasma modification treatment with various parameters was employed on the surface of the device. Results: The sensitivity of the silicon nanowire field-effect transistor could be improved after a 1-minute N2O plasma treatment, because the morphology of the detection region is rougher after the N2O plasma treatment. Hence, a more functional linker could be bound to the surface, thereby increasing the probability of DNA immobilization and hybridization. We used a specific sequence of the IL-1β gene to verify the sensitivity enhancement of the nanowire sensor by using plasma treatment. Conclusion: The sensitivity and detection limit of the plasma-treated sensor can be extrapolated to 0.12/decade and 2.5fM, respectively. The detection results demonstrate that real-time monitoring of the expression of IL-1β using nanowire sensors could be useful for evaluating cancer treatment.

AB - Background: Developing ultrasensitive and selective biological sensors has increased in interest for applications in disease detection, drug discovery, and biomedical diagnostics. This paper reports a CMOS-compatible technique for fabricating a silicon nanowire field-effect transistor. The nanowire sensor was applied to detect a fragment of the cancer-related interleukin-1β (IL-1β) gene, which is characterized as an indicator of breast, colon, lung, oral, head, and neck cancers. Methods: We used the advanced integrated circuit (IC) technique to fabricate a back-gated nanowire field-effect transistor sensor. The dimensions of the nanowire were 60 nm in width and 20 μm in length. To enhance the sensitivity of the nanowire sensor, a plasma modification treatment with various parameters was employed on the surface of the device. Results: The sensitivity of the silicon nanowire field-effect transistor could be improved after a 1-minute N2O plasma treatment, because the morphology of the detection region is rougher after the N2O plasma treatment. Hence, a more functional linker could be bound to the surface, thereby increasing the probability of DNA immobilization and hybridization. We used a specific sequence of the IL-1β gene to verify the sensitivity enhancement of the nanowire sensor by using plasma treatment. Conclusion: The sensitivity and detection limit of the plasma-treated sensor can be extrapolated to 0.12/decade and 2.5fM, respectively. The detection results demonstrate that real-time monitoring of the expression of IL-1β using nanowire sensors could be useful for evaluating cancer treatment.

KW - Field-effect transistor

KW - Label-free detection

KW - Nitrous oxide plasma

KW - Silicon nanowire

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