Deposition of AlGaN films on (111) Si substrates and optimization of GaN growth on Si using intermediate-temperature AlGaN buffer layers

Engineering & Materials Science

• Buffer layers 100%
• Substrates 49%
• Temperature 28%
• Photoluminescence 16%
• Luminescence 14%
• Linewidth 12%
• Cracks 6%
• Chemical analysis 6%

Physics & Astronomy

• buffers 59%
• optimization 46%
• temperature 20%
• cracks 7%
• luminescence 7%
• photoluminescence 7%
• room temperature 5%

Chemical Compounds

• Buffer Solution 45%
• Liquid Film 33%
• Photoluminescence Spectrum 9%
• Luminiscence Type 7%
• Strain 7%
• Ambient Reaction Temperature 5%