AlxGa1-xN films having various Al-contents were grown on (111) Si substrates over a temperature range of 800∼1000 °C. It was found that crack free AlxGa1-xN films were achieved when the films were grown at 800 °C. High temperature (HT) GaN films were also deposited on (111) Si substrates using 800 °C grown AlxGa 1-xN buffer layers with different thickness and composition combinations. The best HT GaN film was achieved on (111) Si substrate by process optimization with an 800 °C grown 180 nm-thick Al0.58Ga 0.42N buffer layer. Room temperature photoluminescence (PL) spectrum of the HT GaN film shows a strong near band edge emission having a linewidth of 100 meV and a quenched yellow luminescence. It is believed that the use of intermediate temperature AlxGa1-xN buffer layer is beneficial to accommodate the misfit strain between HT GaN film and (111) Si substrate.
ASJC Scopus subject areas
- Surfaces, Coatings and Films
- Condensed Matter Physics
- Surfaces and Interfaces
Wang, C. L., Gong, J. R., Liao, W. T., Lin, C. K., & Lin, T. Y. (2005). Deposition of AlGaN films on (111) Si substrates and optimization of GaN growth on Si using intermediate-temperature AlGaN buffer layers. Thin Solid Films, 493(1-2), 135-138. https://doi.org/10.1016/j.tsf.2005.08.004