Correction: Low-temperature formed quaternary NiZrSiGe nanocrystal memory [Int. J. Electrochem. Sci., 10 (2015) (6500-6508)]

Chia-Yu Wu, Huei Yu Huang, Chi Chang Wu

研究成果: 雜誌貢獻評論/辯論

摘要

This was not noticed at the time by the authors and it is corrected by this correction now, and we apologize for any inconvenience this may cause.

原文英語
頁(從 - 到)6156
頁數1
期刊International Journal of Electrochemical Science
13
發行號6
DOIs
出版狀態已發佈 - 六月 1 2018

指紋

Nanocrystals
Data storage equipment
Temperature

ASJC Scopus subject areas

  • Electrochemistry

引用此文

Correction : Low-temperature formed quaternary NiZrSiGe nanocrystal memory [Int. J. Electrochem. Sci., 10 (2015) (6500-6508)]. / Wu, Chia-Yu; Huang, Huei Yu; Wu, Chi Chang.

於: International Journal of Electrochemical Science, 卷 13, 編號 6, 01.06.2018, p. 6156.

研究成果: 雜誌貢獻評論/辯論

@article{85b94b49ac204c74b615fb2777ffe70e,
title = "Correction: Low-temperature formed quaternary NiZrSiGe nanocrystal memory [Int. J. Electrochem. Sci., 10 (2015) (6500-6508)]",
abstract = "This was not noticed at the time by the authors and it is corrected by this correction now, and we apologize for any inconvenience this may cause.",
author = "Chia-Yu Wu and Huang, {Huei Yu} and Wu, {Chi Chang}",
year = "2018",
month = "6",
day = "1",
doi = "10.20964/2018.06.300",
language = "English",
volume = "13",
pages = "6156",
journal = "International Journal of Electrochemical Science",
issn = "1452-3981",
publisher = "Electrochemical Science Group",
number = "6",

}

TY - JOUR

T1 - Correction

T2 - Low-temperature formed quaternary NiZrSiGe nanocrystal memory [Int. J. Electrochem. Sci., 10 (2015) (6500-6508)]

AU - Wu, Chia-Yu

AU - Huang, Huei Yu

AU - Wu, Chi Chang

PY - 2018/6/1

Y1 - 2018/6/1

N2 - This was not noticed at the time by the authors and it is corrected by this correction now, and we apologize for any inconvenience this may cause.

AB - This was not noticed at the time by the authors and it is corrected by this correction now, and we apologize for any inconvenience this may cause.

UR - http://www.scopus.com/inward/record.url?scp=85048269415&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85048269415&partnerID=8YFLogxK

U2 - 10.20964/2018.06.300

DO - 10.20964/2018.06.300

M3 - Comment/debate

AN - SCOPUS:85048269415

VL - 13

SP - 6156

JO - International Journal of Electrochemical Science

JF - International Journal of Electrochemical Science

SN - 1452-3981

IS - 6

ER -