Controlling Conductive Filament and Tributyrin Sensing Using an Optimized Porous Iridium Interfacial Layer in Cu/Ir/TiNxOy/TiN

Mrinmoy Dutta, Siddheswar Maikap, Jiantai Timothy Qiu

研究成果: 雜誌貢獻文章同行評審

16 引文 斯高帕斯(Scopus)

摘要

Controlling the copper (Cu) filament using an optimized porous iridium (Ir) interfacial layer thickness ranging from 2 to 20 nm in a Cu/Ir/TiNxOy/TiN resistive switching memory device is investigated for the first time. Transmission electron microscopy (TEM) shows a porous Ir layer, and X-ray photoelectron spectroscopy (XPS) is performed to determine the Ir0, Ir3+/Ir4+ oxidation states, which are responsible for a super-Nernstian pH sensitivity of 125.5 mV pH−1 as well as a low concentration of 1 × 10−12m tributyrin detected using a 40 nm thick Ir in Ir/TiNxOy/TiN structure. The 5 nm thick Ir layer in the Cu/Ir/TiNxOy/TiN structure shows current–voltage switching characteristics for 3000 consecutive cycles, a stable RESET voltage, a long program/erase (P/E) endurance of >109 cycles under a P/E current of 300 µA at a high speed of 100 ns, and neuromorphic phenomena compared to those of other Ir thicknesses. Cu migration into the TiNxOy oxide-electrolyte is shown by TEM observations. The tributyrin detection ranging from 1 × 10−12 to 100 × 10−12m using a resistive switching memory device paves the way for the early diagnosis of human diseases as well as artificial intelligence applications in the near future.

原文英語
文章編號1800288
期刊Advanced Electronic Materials
5
發行號2
DOIs
出版狀態已發佈 - 二月 2019
對外發佈Yes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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