Characterization of pulsed laser deposited bismuth oxide ultrathin-film enhanced photovoltaic properties of InGaN solar cells

Chun Feng Lai, Chung-Chieh Chang, Min Hsueh Wen, C.K. Lin, Mau Kuen Wu

研究成果: 雜誌貢獻文章同行評審

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摘要

GaN of III-V materials have attracted interesting in the development of optoelectronic devices, such as light-emitting diodes (LEDs) and solar cells [1]. InGaN-based solar cells with the multijunction structures exhibited the photovoltaic characteristic. Unfortunately, most of the reported InGaN solar cells show very low power conversion efficiency of less than 2% [2]. This large discrepancy in efficiency originates from the difficulty in obtaining high-In-content InGaN alloy with good crystalline quality. In order to obtain more high efficiency, we believe better utilization of solar spectrum is necessary. Recently, the science of organic/inorganic nanocomposites is extremely promising for applications in LEDs, photodiodes, and solar cells [3]. Bismuth oxide (Bi2O3) of inorganic metal oxide material is an interesting material, due to its strong absorption to visible light and intrinsic polarizability, Bi2O3 could be enhancement the photovoltaic properties [4]. The concept of Bi2O3 ultrathin-film has, to our knowledge, not yet been applied to InGaN solar cells. Therefore, InGaN solar cells configuration combined Bi2O3 effects improvement the power conversion efficiency of photovoltaic have not been studied so far.
原文英語
頁(從 - 到)494-498
頁數2
期刊 International Conference on Solid State Devices and Materials
出版狀態已發佈 - 2012

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