Carbon nanotubes grown using cobalt silicide as catalyst and hydrogen pretreatment

Hua Chiang Wen, Koho Yang, Keng Liang Ou, Wen Fa Wu, Ren Chon Luo, Chang Pin Chou

研究成果: 雜誌貢獻文章

16 引文 (Scopus)

摘要

Cobalt catalytic-layers 25 nm were deposited by sputtering on silicon substrates. At the pretreatments, hydrogen plasma was conducted for 4-16 min at 600 °C in a MPCVD system. Pretreated samples were characterized using SEM and AFM. Surface morphologies of catalytic-layers were changed after hydrogen plasma pretreatments. The cobalt layers became discontinuous and some nanoparticles were formed. With pretreatments for a long time, nanoparticles tended to agglomerate to reduce surface energy and larger nanoparticles were observed. It is believed that the optimum pretreatment condition for the growth of carbon nanotubes could be achieved because relatively high growth failure and nanofibers (>100 nm) was observed for shorter and longer than 12 min pretreatment, respectively. It is found that the hydrogen pretreatment is a crucial step for the making of nucleation sites in the synthesis of carbon nanotubes using cobalt silicide as catalyst on Si substrates. After the pretreatment, mixture gases of hydrogen and methane were then flowed into the chamber for 12 min, samples were characterized using SEM, TEM and Raman spectrum. Carbon atoms were adsorbed on the islands of catalysts, and then diffused into the edge of nanotubes. Cobalt silicides were formed due to high processing temperature, and cobalt atoms tended to diffuse and stay on the silicon substrates, which enhance carbon nanotubes to grow under the root growth mechanism.

原文英語
頁(從 - 到)221-227
頁數7
期刊Microelectronic Engineering
82
發行號3-4 SPEC. ISS.
DOIs
出版狀態已發佈 - 十二月 2005

指紋

Carbon Nanotubes
Cobalt
pretreatment
Hydrogen
Carbon nanotubes
cobalt
carbon nanotubes
catalysts
Catalysts
hydrogen
Silicon
Nanoparticles
Substrates
hydrogen plasma
nanoparticles
Plasmas
Atoms
Silicides
Scanning electron microscopy
Methane

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics

引用此文

Wen, H. C., Yang, K., Ou, K. L., Wu, W. F., Luo, R. C., & Chou, C. P. (2005). Carbon nanotubes grown using cobalt silicide as catalyst and hydrogen pretreatment. Microelectronic Engineering, 82(3-4 SPEC. ISS.), 221-227. https://doi.org/10.1016/j.mee.2005.07.028

Carbon nanotubes grown using cobalt silicide as catalyst and hydrogen pretreatment. / Wen, Hua Chiang; Yang, Koho; Ou, Keng Liang; Wu, Wen Fa; Luo, Ren Chon; Chou, Chang Pin.

於: Microelectronic Engineering, 卷 82, 編號 3-4 SPEC. ISS., 12.2005, p. 221-227.

研究成果: 雜誌貢獻文章

Wen, HC, Yang, K, Ou, KL, Wu, WF, Luo, RC & Chou, CP 2005, 'Carbon nanotubes grown using cobalt silicide as catalyst and hydrogen pretreatment', Microelectronic Engineering, 卷 82, 編號 3-4 SPEC. ISS., 頁 221-227. https://doi.org/10.1016/j.mee.2005.07.028
Wen, Hua Chiang ; Yang, Koho ; Ou, Keng Liang ; Wu, Wen Fa ; Luo, Ren Chon ; Chou, Chang Pin. / Carbon nanotubes grown using cobalt silicide as catalyst and hydrogen pretreatment. 於: Microelectronic Engineering. 2005 ; 卷 82, 編號 3-4 SPEC. ISS. 頁 221-227.
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