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Barrier capability of Hf-N films with various nitrogen concentrations against copper diffusion in Cu/Hf-N/n
+
-p junction diodes
Keng Liang Ou, Shi Yung Chiou, Ming Hongn Lin, Ray Quan Hsu
牙醫學系
臺北醫學大學生醫器材研究中心
研究成果
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雜誌貢獻
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同行評審
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引文 斯高帕斯(Scopus)
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+
-p junction diodes」主題。共同形成了獨特的指紋。
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Physics & Astronomy
junction diodes
82%
hafnium
78%
p-n junctions
65%
nitrogen
46%
copper
45%
hafnium compounds
43%
annealing
31%
electric contacts
27%
barrier layers
22%
phase transformations
18%
thermal stability
18%
copper compounds
17%
blanks
12%
x rays
9%
radio frequencies
9%
magnetron sputtering
8%
photoelectron spectroscopy
8%
penetration
8%
wafers
7%
transmission electron microscopy
6%
electrical resistivity
6%
silicon
5%
diffraction
5%
thin films
5%
atoms
5%
Engineering & Materials Science
Hafnium
100%
Nitrogen
58%
Diodes
58%
Annealing
52%
Copper
51%
Hafnium compounds
49%
Phase transitions
21%
Thermodynamic stability
21%
Copper compounds
19%
Diffusion barriers
15%
Magnetron sputtering
14%
Surface chemistry
13%
X ray photoelectron spectroscopy
12%
Silicon wafers
12%
Atoms
10%
Transmission electron microscopy
10%
X ray diffraction
10%
Thin films
9%
Temperature
8%
Substrates
7%
Hot Temperature
5%
Chemical Compounds
Diffusion
38%
Nitrogen
38%
Liquid Film
30%
Thermal Stability
16%
Diffusion Barrier
15%
Hafnium Atom
15%
Sputtering
13%
Surface Chemistry
11%
Hexagonal Space Group
9%
X-Ray Photoelectron Spectroscopy
8%
Transmission Electron Microscopy
8%
X-Ray Diffraction
6%