Aluminum nitride thin film for stress biosensing application

Chung Ming Liu, Chin Sung Chen, Che Tong Lin, Sheng Yang Lee, Keng Liang Ou

研究成果: 書貢獻/報告類型會議貢獻

摘要

The microstructural properties and functional failure of A1-N thin films metal-insulator-metal (MIM) capacitors fabricated by reactive-sputtering were studied for the application as differential biosensing of bone cell. The film properties and capacitor capability of Al-N films with and without cell culture were determined using glancing incident X-ray diffraction (GIXRD), leakage current density, cross-sectional transmission electron microscopy (XTEM), and stress analysis as well as biocompatibility test. The as-deposited Al film has a face-center cubic structure and a low resistivity of 3.21 μΩ-cm. With increasing nitrogen concentration of Al-N films, phase transformations are identified as fcc-Al →fcc-Al(N)→ fcc-AlN → hcp-AlN. As the testing result of MIM capacitor, it was manifested that the failure of the AlN MIM capacitors was caused microvoids formed on the film after cell culture. The microvoid having occurred at the cell/AIN MIM capacitor caused it to leak out much of the current to the extent of a few microamperes even at 150k V/cm. The formation of microvoid and low break down voltage was explained by the stress variation during the cell differentiation and proliferation. The stress induced by interaction bone cell and hcp-AlN film resulted in lattice and/or atomic displacement and distortion of AlN. It is believed that the [002] oriented AlN film is shown to perform effectively as a biosensing film to detect the cell differentiation and proliferation by MIM capacitor device. Furthermore, the biosensing film will have a potential for use in wireless technology to monitor the osseointegration in the future. copyright The Electrochemical Society.
原文英語
主出版物標題ECS Transactions
頁面27-37
頁數11
2
版本19
DOIs
出版狀態已發佈 - 2007
事件209th ECS Meeting - Denver, CO, 美国
持續時間: 五月 7 2006五月 12 2006

其他

其他209th ECS Meeting
國家美国
城市Denver, CO
期間5/7/065/12/06

ASJC Scopus subject areas

  • Engineering(all)

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