A robust data retention characteristic of SolGel-derived nanocrystal memory by hot-hole trapping

Chi Chang Wu, Fu Hsiang Ko, Wen Luh Yang, Hsin Chiang You, Fu Ken Liu, Chen Chih Yeh, Pin Lin Liu, Chiou Kou Tung, Ching Hwa Cheng

研究成果: 雜誌貢獻文章同行評審

7 引文 斯高帕斯(Scopus)

摘要

A new solgel-derived TixZrySizO nanocrystal (NC) memory with a high-performance data retention characteristic is demonstrated by the hot-hole-trapping method. Prior to rapid thermal annealing, the high-density NC layer is formed by depositing a well-mixed solution of titanium tetrachloride, silicon tetrachloride, and zirconium tetrachloride. The electrical properties of the solgel-derived NC memory are demonstrated in terms of memory window, charge retention, program speed, and endurance. The memory window of the NC memory from the novel hot-hole-trapping mechanism can be achieved up to 4.18 ± 0.21 V, and long retention times obtained from extrapolation up to 106 s are observed as 8%, 13%, and 21% window narrowing under respective temperatures of 25 °C, 85 °C, and 125 °C. The good electrical performance is attributed to the contribution of the high density of isolated NCs and hole-trapped into the deep-trap energy level, so no significant lateral and vertical charge leakage occurs.

原文英語
文章編號5466227
頁(從 - 到)746-748
頁數3
期刊IEEE Electron Device Letters
31
發行號7
DOIs
出版狀態已發佈 - 七月 2010

ASJC Scopus subject areas

  • 電子、光磁材料
  • 電氣與電子工程

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