A Novel Approach to Fabricate Silicon Nanowire Field Effect Transistor for Biomolecule Sensing

Chi Chang Wu, Yankuba B. Manga, Jia Yang Hung, Wen Luh Yang

研究成果: 書貢獻/報告類型會議貢獻

摘要

A novel silicon nanowire field effect transistor (SiNW-FET) was fabricated using complementary metal oxide semiconductor (CMOS) compatible technology. The shrank nanowire with high surface-to-volume ratio and individual back gate were achieved by the local-oxidation of silicon (LOCOS) process. The width of nanowire by this technique can be shrank down to sub 100, nm. The drain current versus gate voltage (Id-Vg) characteristic of the SiNW-FET exhibits about five orders of magnitude of Ion/Ioff current ratio, and the threshold voltage shifts positively after hybridization of 1fM concentrations of HBV X gene DNA fragments and 3, ng/mL concentrations of the cancer marker, respectively. The results show that the back-gated nanowire device has the capability of acting as a real-time, label-free, highly sensitivity and excellent selectivity SiNW-FET biosensor in detecting biomolecules.

原文英語
主出版物標題AETA 2017 - Recent Advances in Electrical Engineering and Related Sciences - Theory and Application
編輯Sang Bong Kim, Tran Trong Dao, Ivan Zelinka, Vo Hoang Duy, Tran Thanh Phuong
發行者Springer Verlag
頁面250-257
頁數8
ISBN(列印)9783319698137
DOIs
出版狀態已發佈 - 2018
對外發佈
事件4th International Conference on Advanced Engineering Theory and Applications, AETA 2017 - Ho Chi Minh, 越南
持續時間: 十二月 7 2017十二月 9 2017

出版系列

名字Lecture Notes in Electrical Engineering
465
ISSN(列印)1876-1100
ISSN(電子)1876-1119

其他

其他4th International Conference on Advanced Engineering Theory and Applications, AETA 2017
國家/地區越南
城市Ho Chi Minh
期間12/7/1712/9/17

ASJC Scopus subject areas

  • 工業與製造工程

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