A CMOS-compatible poly-si nanowire device with hybrid sensor/memory characteristics for system-on-chip applications

Min Cheng Chen, Hao Yu Chen, Chia Yi Lin, Chao Hsin Chien, Tsung Fan Hsieh, Jim Tong Horng, Jian Tai Qiu, Chien Chao Huang, Chia Hua Ho, Fu Liang Yang

研究成果: 雜誌貢獻文章同行評審

16 引文 斯高帕斯(Scopus)

摘要

This paper reports a versatile nano-sensor technology using "top-down" poly-silicon nanowire field-effect transistors (FETs) in the conventional Complementary Metal-Oxide Semiconductor (CMOS)-compatible semiconductor process. The nanowire manufacturing technique reduced nanowire width scaling to 50 nm without use of extra lithography equipment, and exhibited superior device uniformity. These n type polysilicon nanowire FETs have positive pH sensitivity (100 mV/pH) and sensitive deoxyribonucleic acid (DNA) detection ability (100 pM) at normal system operation voltages. Specially designed oxide-nitride-oxide buried oxide nanowire realizes an electrically Vth-adjustable sensor to compensate device variation. These nanowire FETs also enable non-volatile memory application for a large and steady Vth adjustment window (>2 V Programming/ Erasing window). The CMOS-compatible manufacturing technique of polysilicon nanowire FETs offers a possible solution for commercial System-on-Chip biosensor application, which enables portable physiology monitoring and in situ recording.

原文英語
頁(從 - 到)3952-3963
頁數12
期刊Sensors
12
發行號4
DOIs
出版狀態已發佈 - 四月 2012
對外發佈

ASJC Scopus subject areas

  • 分析化學
  • 生物化學
  • 原子與分子物理與光學
  • 儀器
  • 電氣與電子工程

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