A 3-D stackable maskless embedded metal-gate thin-film-transistor nanowire for use in bioelectronic probing

Min Cheng Chen, Chang Hsien Lin, Chia Yi Lin, Hsiao Chain Chen, Ta Hsien Lee, Mu Yi Hua, Jian Tai Qiu, Chiahua Ho, Fu Liang Yang

研究成果: 雜誌貢獻文章同行評審

摘要

Using a self-aligned sidewall microcrystalline-silicon (μ-Si) dual channel, comprising a sub-50-nm channel width, a novel 3-D stackable maskless embedded metal-gate thin-film-transistor nanowire device was fabricated on top metal using a tungsten gate-stack and trilayered oxide/nitride/oxide gate dielectric. The results of using a charge-transferring mechanism based on the solution-phased pH of a phosphate buffer solution and vascular endothelial growth factor showed that μ-Si surfaces exhibit high potential for use in bioelectronics. The device exhibits long-term reliability regarding bioelectronic probing and is as reliable as the commercially available enzyme-linked immunosorbent assay when conducting a targeted, 100-day therapy for ovarian cancer. Thus, the proposed device exhibits potential for use in label-free, economical, and highly reliable lab-on-chip 3-D applications.

原文英語
文章編號6740855
頁(從 - 到)897-901
頁數5
期刊IEEE Transactions on Electron Devices
61
發行號3
DOIs
出版狀態已發佈 - 三月 2014
對外發佈Yes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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