30×40 cm 2 flexible Cu(In,Ga)Se 2 solar panel by low temperature plasma enhanced selenization process

Tsung Ta Wu, Chia Ho Chang, Cheng Hung Hsu, Wen Chi Tsai, Hsu Sheng Tsai, Yu Ting Yen, Chang Hong Shen, Jia Min Shieh, Yu Lun Chueh

研究成果: 雜誌貢獻文章

11 引文 (Scopus)

摘要

A progressing non-toxic plasma-enhanced solid Se vapor selenization process (PESVS) technique, compared with hydrogen-assisted Se vapor selenization (HASVS) to achieve a large-area (30×40 cm 2 ) Cu(In,Ga)Se 2 (CIGS) solar panel with enhanced efficiencies from 10.8% to 13.2% (14.7% for active area), was demonstrated. The bonding of Se was partially broken by ICP plasma treatment and these Se radicals are helpful to enhance reaction activity for following selenization process at an extremely low temperature of 330 °C. The effects of plasma steps, plasma power, selenization temperature and optimized conditions were thoroughly studied in detail. The remarkable enhancement of the efficiency is ascribed to the better crystallinity, enlarged grain size, less Se vacancy and uniform depth distribution of Ga. From reaction kinetics point of view, PESVS provides extra energy to crack Se, resulting in the decrease in reaction activation energy. The PESVS methodology was also applied to low temperature (450 °C) selenized CIGS thin film solar panel with uniform conversion efficiency more than ~10%. Furthermore, a large-area flexible stainless steel substrate with remarkable conversion efficiency of ~6.8% without Na addition was demonstrated. We believed that this work can provide a facile approach of low temperature selenization on flexible substrate applications or fast selenization for throughput consideration, thus stimulating the mass-production in large scale CIGS PV industry.
原文英語
頁(從 - 到)45-55
頁數11
期刊Nano Energy
24
DOIs
出版狀態已發佈 - 六月 1 2016
對外發佈Yes

指紋

Plasmas
Vapors
Temperature
Conversion efficiency
Stainless Steel
Inductively coupled plasma
Substrates
Reaction kinetics
Vacancies
Hydrogen
Stainless steel
Activation energy
Throughput
Cracks
Thin films
Industry

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Materials Science(all)
  • Electrical and Electronic Engineering

引用此文

30×40 cm 2 flexible Cu(In,Ga)Se 2 solar panel by low temperature plasma enhanced selenization process. / Wu, Tsung Ta; Chang, Chia Ho; Hsu, Cheng Hung; Tsai, Wen Chi; Tsai, Hsu Sheng; Yen, Yu Ting; Shen, Chang Hong; Shieh, Jia Min; Chueh, Yu Lun.

於: Nano Energy, 卷 24, 01.06.2016, p. 45-55.

研究成果: 雜誌貢獻文章

Wu, Tsung Ta ; Chang, Chia Ho ; Hsu, Cheng Hung ; Tsai, Wen Chi ; Tsai, Hsu Sheng ; Yen, Yu Ting ; Shen, Chang Hong ; Shieh, Jia Min ; Chueh, Yu Lun. / 30×40 cm 2 flexible Cu(In,Ga)Se 2 solar panel by low temperature plasma enhanced selenization process. 於: Nano Energy. 2016 ; 卷 24. 頁 45-55.
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title = "30×40 cm 2 flexible Cu(In,Ga)Se 2 solar panel by low temperature plasma enhanced selenization process",
abstract = "A progressing non-toxic plasma-enhanced solid Se vapor selenization process (PESVS) technique, compared with hydrogen-assisted Se vapor selenization (HASVS) to achieve a large-area (30×40 cm 2 ) Cu(In,Ga)Se 2 (CIGS) solar panel with enhanced efficiencies from 10.8{\%} to 13.2{\%} (14.7{\%} for active area), was demonstrated. The bonding of Se was partially broken by ICP plasma treatment and these Se radicals are helpful to enhance reaction activity for following selenization process at an extremely low temperature of 330 °C. The effects of plasma steps, plasma power, selenization temperature and optimized conditions were thoroughly studied in detail. The remarkable enhancement of the efficiency is ascribed to the better crystallinity, enlarged grain size, less Se vacancy and uniform depth distribution of Ga. From reaction kinetics point of view, PESVS provides extra energy to crack Se, resulting in the decrease in reaction activation energy. The PESVS methodology was also applied to low temperature (450 °C) selenized CIGS thin film solar panel with uniform conversion efficiency more than ~10{\%}. Furthermore, a large-area flexible stainless steel substrate with remarkable conversion efficiency of ~6.8{\%} without Na addition was demonstrated. We believed that this work can provide a facile approach of low temperature selenization on flexible substrate applications or fast selenization for throughput consideration, thus stimulating the mass-production in large scale CIGS PV industry.",
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AU - Wu, Tsung Ta

AU - Chang, Chia Ho

AU - Hsu, Cheng Hung

AU - Tsai, Wen Chi

AU - Tsai, Hsu Sheng

AU - Yen, Yu Ting

AU - Shen, Chang Hong

AU - Shieh, Jia Min

AU - Chueh, Yu Lun

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N2 - A progressing non-toxic plasma-enhanced solid Se vapor selenization process (PESVS) technique, compared with hydrogen-assisted Se vapor selenization (HASVS) to achieve a large-area (30×40 cm 2 ) Cu(In,Ga)Se 2 (CIGS) solar panel with enhanced efficiencies from 10.8% to 13.2% (14.7% for active area), was demonstrated. The bonding of Se was partially broken by ICP plasma treatment and these Se radicals are helpful to enhance reaction activity for following selenization process at an extremely low temperature of 330 °C. The effects of plasma steps, plasma power, selenization temperature and optimized conditions were thoroughly studied in detail. The remarkable enhancement of the efficiency is ascribed to the better crystallinity, enlarged grain size, less Se vacancy and uniform depth distribution of Ga. From reaction kinetics point of view, PESVS provides extra energy to crack Se, resulting in the decrease in reaction activation energy. The PESVS methodology was also applied to low temperature (450 °C) selenized CIGS thin film solar panel with uniform conversion efficiency more than ~10%. Furthermore, a large-area flexible stainless steel substrate with remarkable conversion efficiency of ~6.8% without Na addition was demonstrated. We believed that this work can provide a facile approach of low temperature selenization on flexible substrate applications or fast selenization for throughput consideration, thus stimulating the mass-production in large scale CIGS PV industry.

AB - A progressing non-toxic plasma-enhanced solid Se vapor selenization process (PESVS) technique, compared with hydrogen-assisted Se vapor selenization (HASVS) to achieve a large-area (30×40 cm 2 ) Cu(In,Ga)Se 2 (CIGS) solar panel with enhanced efficiencies from 10.8% to 13.2% (14.7% for active area), was demonstrated. The bonding of Se was partially broken by ICP plasma treatment and these Se radicals are helpful to enhance reaction activity for following selenization process at an extremely low temperature of 330 °C. The effects of plasma steps, plasma power, selenization temperature and optimized conditions were thoroughly studied in detail. The remarkable enhancement of the efficiency is ascribed to the better crystallinity, enlarged grain size, less Se vacancy and uniform depth distribution of Ga. From reaction kinetics point of view, PESVS provides extra energy to crack Se, resulting in the decrease in reaction activation energy. The PESVS methodology was also applied to low temperature (450 °C) selenized CIGS thin film solar panel with uniform conversion efficiency more than ~10%. Furthermore, a large-area flexible stainless steel substrate with remarkable conversion efficiency of ~6.8% without Na addition was demonstrated. We believed that this work can provide a facile approach of low temperature selenization on flexible substrate applications or fast selenization for throughput consideration, thus stimulating the mass-production in large scale CIGS PV industry.

KW - Cu(In,Ga)Se

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KW - Plasma-enhanced

KW - Selenization

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