Tunable Photoinduced Carrier Transport of a Black Phosphorus Transistor with Extended Stability Using a Light-Sensitized Encapsulated Layer

Po Hsun Ho, Min Ken Li, Raman Sankar, Fu Yu Shih, Shao Sian Li, Yih Ren Chang, Wei Hua Wang, Fang Cheng Chou, Chun Wei Chen

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

In this article, we propose a novel approach to demonstrate tunable photoinduced carrier transport of a few-layered black phosphorus (BP) field-effect transistor (FET) with extended air stability using a "light-sensitized ultrathin encapsulated layer". Titanium suboxide (TiOx) ultrathin film (approximately 3 nm), which is an amorphous phase of crystalline TiO2 and can be solution processed, simultaneously exhibits the unique dual functions of passivation and photoinduced doping on a BP FET. The photoinduced electron transfer at TiOx/BP interfaces provides tunable n-Type doping on BP through light illumination. Accordingly, the intrinsic hole-dominated transport of BP can be gradually tuned to the electron-dominated transport at a TiOx/BP FET using light modulation, with enhanced electron mobility and extended air stability of the device. The novel device structure consisting of a light-sensitized encapsulated layer with controllable and reversible doping through light illumination on BP exhibits great potential for the future development of stable BP-based semiconductor logic devices or optoelectronic devices.

Original languageEnglish
Pages (from-to)1102-1108
Number of pages7
JournalACS Photonics
Volume3
Issue number6
DOIs
Publication statusPublished - Jun 15 2016
Externally publishedYes

Keywords

  • black phosphorus
  • field-effect transistor
  • n-Type
  • photodoping
  • stability

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Biotechnology
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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