Tunable Photoinduced Carrier Transport of a Black Phosphorus Transistor with Extended Stability Using a Light-Sensitized Encapsulated Layer

Po Hsun Ho, Min Ken Li, Raman Sankar, Fu Yu Shih, Shao Sian Li, Yih Ren Chang, Wei Hua Wang, Fang Cheng Chou, Chun Wei Chen

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

In this article, we propose a novel approach to demonstrate tunable photoinduced carrier transport of a few-layered black phosphorus (BP) field-effect transistor (FET) with extended air stability using a "light-sensitized ultrathin encapsulated layer". Titanium suboxide (TiOx) ultrathin film (approximately 3 nm), which is an amorphous phase of crystalline TiO2 and can be solution processed, simultaneously exhibits the unique dual functions of passivation and photoinduced doping on a BP FET. The photoinduced electron transfer at TiOx/BP interfaces provides tunable n-Type doping on BP through light illumination. Accordingly, the intrinsic hole-dominated transport of BP can be gradually tuned to the electron-dominated transport at a TiOx/BP FET using light modulation, with enhanced electron mobility and extended air stability of the device. The novel device structure consisting of a light-sensitized encapsulated layer with controllable and reversible doping through light illumination on BP exhibits great potential for the future development of stable BP-based semiconductor logic devices or optoelectronic devices.

Original languageEnglish
Pages (from-to)1102-1108
Number of pages7
JournalACS Photonics
Volume3
Issue number6
DOIs
Publication statusPublished - Jun 15 2016
Externally publishedYes

Fingerprint

Carrier transport
Phosphorus
phosphorus
Transistors
transistors
Light
Field effect transistors
Titanium
Equipment and Supplies
field effect transistors
titanium
Doping (additives)
Lighting
illumination
Air
Electrons
Semiconductors
Logic devices
Ultrathin films
Light modulation

Keywords

  • black phosphorus
  • field-effect transistor
  • n-Type
  • photodoping
  • stability

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Biotechnology
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

Tunable Photoinduced Carrier Transport of a Black Phosphorus Transistor with Extended Stability Using a Light-Sensitized Encapsulated Layer. / Ho, Po Hsun; Li, Min Ken; Sankar, Raman; Shih, Fu Yu; Li, Shao Sian; Chang, Yih Ren; Wang, Wei Hua; Chou, Fang Cheng; Chen, Chun Wei.

In: ACS Photonics, Vol. 3, No. 6, 15.06.2016, p. 1102-1108.

Research output: Contribution to journalArticle

Ho, Po Hsun ; Li, Min Ken ; Sankar, Raman ; Shih, Fu Yu ; Li, Shao Sian ; Chang, Yih Ren ; Wang, Wei Hua ; Chou, Fang Cheng ; Chen, Chun Wei. / Tunable Photoinduced Carrier Transport of a Black Phosphorus Transistor with Extended Stability Using a Light-Sensitized Encapsulated Layer. In: ACS Photonics. 2016 ; Vol. 3, No. 6. pp. 1102-1108.
@article{d9739d2124474bec9df0d66b77763a99,
title = "Tunable Photoinduced Carrier Transport of a Black Phosphorus Transistor with Extended Stability Using a Light-Sensitized Encapsulated Layer",
abstract = "In this article, we propose a novel approach to demonstrate tunable photoinduced carrier transport of a few-layered black phosphorus (BP) field-effect transistor (FET) with extended air stability using a {"}light-sensitized ultrathin encapsulated layer{"}. Titanium suboxide (TiOx) ultrathin film (approximately 3 nm), which is an amorphous phase of crystalline TiO2 and can be solution processed, simultaneously exhibits the unique dual functions of passivation and photoinduced doping on a BP FET. The photoinduced electron transfer at TiOx/BP interfaces provides tunable n-Type doping on BP through light illumination. Accordingly, the intrinsic hole-dominated transport of BP can be gradually tuned to the electron-dominated transport at a TiOx/BP FET using light modulation, with enhanced electron mobility and extended air stability of the device. The novel device structure consisting of a light-sensitized encapsulated layer with controllable and reversible doping through light illumination on BP exhibits great potential for the future development of stable BP-based semiconductor logic devices or optoelectronic devices.",
keywords = "black phosphorus, field-effect transistor, n-Type, photodoping, stability",
author = "Ho, {Po Hsun} and Li, {Min Ken} and Raman Sankar and Shih, {Fu Yu} and Li, {Shao Sian} and Chang, {Yih Ren} and Wang, {Wei Hua} and Chou, {Fang Cheng} and Chen, {Chun Wei}",
year = "2016",
month = "6",
day = "15",
doi = "10.1021/acsphotonics.6b00192",
language = "English",
volume = "3",
pages = "1102--1108",
journal = "ACS Photonics",
issn = "2330-4022",
publisher = "American Chemical Society",
number = "6",

}

TY - JOUR

T1 - Tunable Photoinduced Carrier Transport of a Black Phosphorus Transistor with Extended Stability Using a Light-Sensitized Encapsulated Layer

AU - Ho, Po Hsun

AU - Li, Min Ken

AU - Sankar, Raman

AU - Shih, Fu Yu

AU - Li, Shao Sian

AU - Chang, Yih Ren

AU - Wang, Wei Hua

AU - Chou, Fang Cheng

AU - Chen, Chun Wei

PY - 2016/6/15

Y1 - 2016/6/15

N2 - In this article, we propose a novel approach to demonstrate tunable photoinduced carrier transport of a few-layered black phosphorus (BP) field-effect transistor (FET) with extended air stability using a "light-sensitized ultrathin encapsulated layer". Titanium suboxide (TiOx) ultrathin film (approximately 3 nm), which is an amorphous phase of crystalline TiO2 and can be solution processed, simultaneously exhibits the unique dual functions of passivation and photoinduced doping on a BP FET. The photoinduced electron transfer at TiOx/BP interfaces provides tunable n-Type doping on BP through light illumination. Accordingly, the intrinsic hole-dominated transport of BP can be gradually tuned to the electron-dominated transport at a TiOx/BP FET using light modulation, with enhanced electron mobility and extended air stability of the device. The novel device structure consisting of a light-sensitized encapsulated layer with controllable and reversible doping through light illumination on BP exhibits great potential for the future development of stable BP-based semiconductor logic devices or optoelectronic devices.

AB - In this article, we propose a novel approach to demonstrate tunable photoinduced carrier transport of a few-layered black phosphorus (BP) field-effect transistor (FET) with extended air stability using a "light-sensitized ultrathin encapsulated layer". Titanium suboxide (TiOx) ultrathin film (approximately 3 nm), which is an amorphous phase of crystalline TiO2 and can be solution processed, simultaneously exhibits the unique dual functions of passivation and photoinduced doping on a BP FET. The photoinduced electron transfer at TiOx/BP interfaces provides tunable n-Type doping on BP through light illumination. Accordingly, the intrinsic hole-dominated transport of BP can be gradually tuned to the electron-dominated transport at a TiOx/BP FET using light modulation, with enhanced electron mobility and extended air stability of the device. The novel device structure consisting of a light-sensitized encapsulated layer with controllable and reversible doping through light illumination on BP exhibits great potential for the future development of stable BP-based semiconductor logic devices or optoelectronic devices.

KW - black phosphorus

KW - field-effect transistor

KW - n-Type

KW - photodoping

KW - stability

UR - http://www.scopus.com/inward/record.url?scp=84975073279&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84975073279&partnerID=8YFLogxK

U2 - 10.1021/acsphotonics.6b00192

DO - 10.1021/acsphotonics.6b00192

M3 - Article

VL - 3

SP - 1102

EP - 1108

JO - ACS Photonics

JF - ACS Photonics

SN - 2330-4022

IS - 6

ER -