Thin-film transistors with Zn1-xMgxO active layers fabricated by sol-gel method

Shin Chuan Chiang, Chin Chih Yu, Chien Yie Tsay, Bor Chuan Chuang, Min Chi Wang, Chung Kwei Lin, Ming Ying Ma, Jiunn Yan Ou

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Zinc oxide thin-film transistors (ZnO-TFTs) have attracted numerous R&D interest due to their high transparency and low photosensitivity compared with typical a-Si:H TFTs. The electrical characteristics of ZnO films may be controlled by doping with ternary element. In this study, Zn 1-xMgxO (x = 0 to 0.36) thin films were prepared and TFTs with Zn1-xMgxO active channel layer were fabricated. The results show that, addition of Mg-species in ZnO films markedly improved optical properties. The Zn0.8Mg0.2O film exhibited the best transparency and the rms roughness value decreased to 1.63. The Zn 1-xMgxO TFTs were demonstrated to have n-type enhancement behavior.

Original languageEnglish
Title of host publicationIDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings
Pages884-887
Number of pages4
Publication statusPublished - 2007
Externally publishedYes
EventInternational Display Manufacturing Conference and Exhibition, IDMC 2007 - Taipei, Taiwan
Duration: Jul 3 2007Jul 6 2007

Other

OtherInternational Display Manufacturing Conference and Exhibition, IDMC 2007
CountryTaiwan
CityTaipei
Period7/3/077/6/07

Fingerprint

Thin film transistors
Sol-gel process
Transparency
Zinc Oxide
Photosensitivity
Zinc oxide
Chemical elements
Oxide films
Optical properties
Surface roughness
Doping (additives)
Thin films

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Chiang, S. C., Yu, C. C., Tsay, C. Y., Chuang, B. C., Wang, M. C., Lin, C. K., ... Ou, J. Y. (2007). Thin-film transistors with Zn1-xMgxO active layers fabricated by sol-gel method. In IDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings (pp. 884-887)

Thin-film transistors with Zn1-xMgxO active layers fabricated by sol-gel method. / Chiang, Shin Chuan; Yu, Chin Chih; Tsay, Chien Yie; Chuang, Bor Chuan; Wang, Min Chi; Lin, Chung Kwei; Ma, Ming Ying; Ou, Jiunn Yan.

IDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings. 2007. p. 884-887.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Chiang, SC, Yu, CC, Tsay, CY, Chuang, BC, Wang, MC, Lin, CK, Ma, MY & Ou, JY 2007, Thin-film transistors with Zn1-xMgxO active layers fabricated by sol-gel method. in IDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings. pp. 884-887, International Display Manufacturing Conference and Exhibition, IDMC 2007, Taipei, Taiwan, 7/3/07.
Chiang SC, Yu CC, Tsay CY, Chuang BC, Wang MC, Lin CK et al. Thin-film transistors with Zn1-xMgxO active layers fabricated by sol-gel method. In IDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings. 2007. p. 884-887
Chiang, Shin Chuan ; Yu, Chin Chih ; Tsay, Chien Yie ; Chuang, Bor Chuan ; Wang, Min Chi ; Lin, Chung Kwei ; Ma, Ming Ying ; Ou, Jiunn Yan. / Thin-film transistors with Zn1-xMgxO active layers fabricated by sol-gel method. IDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings. 2007. pp. 884-887
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abstract = "Zinc oxide thin-film transistors (ZnO-TFTs) have attracted numerous R&D interest due to their high transparency and low photosensitivity compared with typical a-Si:H TFTs. The electrical characteristics of ZnO films may be controlled by doping with ternary element. In this study, Zn 1-xMgxO (x = 0 to 0.36) thin films were prepared and TFTs with Zn1-xMgxO active channel layer were fabricated. The results show that, addition of Mg-species in ZnO films markedly improved optical properties. The Zn0.8Mg0.2O film exhibited the best transparency and the rms roughness value decreased to 1.63. The Zn 1-xMgxO TFTs were demonstrated to have n-type enhancement behavior.",
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AU - Chiang, Shin Chuan

AU - Yu, Chin Chih

AU - Tsay, Chien Yie

AU - Chuang, Bor Chuan

AU - Wang, Min Chi

AU - Lin, Chung Kwei

AU - Ma, Ming Ying

AU - Ou, Jiunn Yan

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AB - Zinc oxide thin-film transistors (ZnO-TFTs) have attracted numerous R&D interest due to their high transparency and low photosensitivity compared with typical a-Si:H TFTs. The electrical characteristics of ZnO films may be controlled by doping with ternary element. In this study, Zn 1-xMgxO (x = 0 to 0.36) thin films were prepared and TFTs with Zn1-xMgxO active channel layer were fabricated. The results show that, addition of Mg-species in ZnO films markedly improved optical properties. The Zn0.8Mg0.2O film exhibited the best transparency and the rms roughness value decreased to 1.63. The Zn 1-xMgxO TFTs were demonstrated to have n-type enhancement behavior.

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