Thin-film transistors with Zn1-xMgxO active layers fabricated by sol-gel method

Shin Chuan Chiang, Chin Chih Yu, Chien Yie Tsay, Bor Chuan Chuang, Min Chi Wang, Chung Kwei Lin, Ming Ying Ma, Jiunn Yan Ou

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Zinc oxide thin-film transistors (ZnO-TFTs) have attracted numerous R&D interest due to their high transparency and low photosensitivity compared with typical a-Si:H TFTs. The electrical characteristics of ZnO films may be controlled by doping with ternary element. In this study, Zn 1-xMgxO (x = 0 to 0.36) thin films were prepared and TFTs with Zn1-xMgxO active channel layer were fabricated. The results show that, addition of Mg-species in ZnO films markedly improved optical properties. The Zn0.8Mg0.2O film exhibited the best transparency and the rms roughness value decreased to 1.63. The Zn 1-xMgxO TFTs were demonstrated to have n-type enhancement behavior.

Original languageEnglish
Title of host publicationIDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings
Pages884-887
Number of pages4
Publication statusPublished - 2007
Externally publishedYes
EventInternational Display Manufacturing Conference and Exhibition, IDMC 2007 - Taipei, Taiwan
Duration: Jul 3 2007Jul 6 2007

Other

OtherInternational Display Manufacturing Conference and Exhibition, IDMC 2007
CountryTaiwan
CityTaipei
Period7/3/077/6/07

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Chiang, S. C., Yu, C. C., Tsay, C. Y., Chuang, B. C., Wang, M. C., Lin, C. K., Ma, M. Y., & Ou, J. Y. (2007). Thin-film transistors with Zn1-xMgxO active layers fabricated by sol-gel method. In IDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings (pp. 884-887)